IP Library Granted Patent US 8,283,659
Granted Patent B2
US 8,283,659 · App. 12/977,209 · Granted Oct 9, 2012

Tetrahydrotetraazapentacenes in thin-film transistors

Assignee: Xerox Corporation
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Quick Facts
Patent No.
US 8,283,659
App. No.
12/977,209
Granted
Oct 9, 2012
Kind
B2
Abstract

Compounds of Formula (I) are disclosed: wherein R 1 -R 14 , x, y, and z are as defined herein. The compounds are useful as semiconducting materials for electronic devices such as thin-film transistors.

Claims (30)

1. A compound of Formula (I):

wherein each R 1 , R 2 , R 3 , R 4 , R 6 , R 8 , R 9 , R 10 , R 11 , and R 13 is independently selected from hydrogen, alkyl, alkenyl, alkynyl, substituted alkyl, substituted alkenyl, substituted alkynyl, aryl, substituted aryl, and halogen; each R 5 , R 7 , R 12 , and R 14 is independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl; x is an integer from 1 to 3; y is an integer from 1 to 4; and z is an integer from 1 to 3.

2. The compound of claim 1 , wherein x, y, and z are 1 and R 1 -R 14 are hydrogen.

3. The compound of claim 1 , wherein R 2 and R 3 are identical to each other, R 9 and R 10 are identical to each other, and R 2 is different from R 9 .

4. The compound of claim 1 , wherein R 2 , R 3 , R 9 , and R 10 are not hydrogen.

5. The compound of claim 4 , wherein R 2 , R 3 , R 9 , and R 10 are the same.

6. The compound of claim 1 , wherein the compound is of Formula (II):

wherein R 2 , R 3 , R 9 , and R 10 , are independently selected from hydrogen, alkyl, alkenyl, alkynyl, substituted alkyl, substituted alkenyl, substituted alkynyl, aryl, substituted aryl, and halogen; wherein R 5 , R 7 , R 12 , and R 14 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl; and wherein at least one of R 2 , R 3 , R 5 , R 7 , R 9 , R 10 , R 12 , or R 14 is not hydrogen.

7. The compound of claim 1 , wherein the compound is of Formula (III):

wherein R 2 , R 3 , R 9 , and R 10 are independently selected from hydrogen, alkyl, alkenyl, alkynyl, substituted alkyl, substituted alkenyl, substituted alkynyl, aryl, substituted aryl, and halogen; and wherein at least one of R 2 , R 3 , R 9 , or R 10 is not hydrogen.

8. The compound of claim 7 , wherein R 2 and R 3 are identical to each other, R 9 and R 10 are identical to each other, and R 2 is different from R 9 .

9. The compound of claim 1 , wherein the compound is of Formula (IV):

wherein R 5 , R 7 , R 12 , and R 14 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl.

10. The compound of claim 9 , wherein R 5 , R 7 , R 12 , and R 14 are the same.

11. The compound of claim 9 , wherein R 5 and R 14 are identical to each other; R 7 and R 12 are identical to each other; and R 5 is different from R 7 .

12. A thin film transistor, comprising:

a substrate; and

a semiconducting layer on the substrate, the semiconducting layer comprising a tetrahydrotetraazaacene of Formula (I):

wherein each R 1 , R 2 , R 3 , R 4 , R 6 , R 8 , R 9 , R 10 , R 11 , and R 13 is independently selected from hydrogen, alkyl, alkenyl, alkynyl, substituted alkyl, substituted alkenyl, substituted alkynyl, aryl, substituted aryl, and halogen; each R 5 , R 7 , R 12 , and R 14 is independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl; x is an integer from 1 to 3; y is an integer from 1 to 4; and z is an integer from 1 to 3.

13. The transistor of claim 12 , wherein x, y, and z are 1 and R 1 -R 14 are hydrogen.

14. The transistor of claim 12 , wherein x and z are equal to each other.

15. The transistor of claim 12 , wherein y is from 2 to 4.

16. The transistor of claim 12 , wherein R 5 , R 7 , R 12 , and R 14 are the same.

17. The transistor of claim 12 , wherein R 2 and R 3 are identical to each other, R 9 and R 10 are identical to each other, and R 2 is different from R 9 .

18. The transistor of claim 12 , wherein the tetrahydrotetraazaacene is of Formula (II):

wherein R 2 , R 3 , R 9 , and R 10 , are independently selected from hydrogen, alkyl, alkenyl, alkynyl, substituted alkyl, substituted alkenyl, substituted alkynyl, aryl, substituted aryl, and halogen; wherein R 5 , R 7 , R 12 , and R 14 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl; and wherein at least one of R 2 , R 3 , R 5 , R 7 , R 9 , R 10 , R 12 , or R 14 is not hydrogen.

19. The transistor of claim 12 , wherein the tetrahydrotetraazaacene is of Formula (III):

wherein R 2 , R 3 , R 9 , and R 10 are independently selected from hydrogen, alkyl, alkenyl, alkynyl, substituted alkyl, substituted alkenyl, substituted alkynyl, aryl, and substituted aryl; and wherein at least one of R 2 , R 3 , R 9 , or R 10 is not hydrogen.

20. The transistor of claim 12 , wherein the tetrahydrotetraazaacene is of Formula (IV):

wherein R 5 , R 7 , R 12 , and R 14 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 3, 2013
From: XEROX CORPORATION
To: SAMSUNG ELECTRONICS CO. LTD.
Reel/Frame 030733/0970 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2010
From: HEUFT, MATTHEW A.; WU, YILIANG
To: XEROX CORPORATION
Reel/Frame 025562/0857 →
Continuity (1)
Related Publication 20120161108A1 · Jun 28, 2012