Small molecule semiconductor
Disclosed is a small molecule semiconductor of Formula (I): wherein R 1 and R 2 are as described herein. The compound is useful in a semiconducting layer for an electronic device, such as a thin-film transistor. Devices including the compound exhibit high mobility and excellent stability.
1. A small molecule semiconductor of Formula (I):
wherein R 1 and R 2 are independently selected from alkenyl, substituted alkenyl, alkynyl, substituted alkynyl, aryl, substituted aryl, alkoxy, alkylthio, alkylsilyl, and halogen.
2. The small molecule semiconductor of claim 1 , wherein R 1 and R 2 are independently C 4 -C 36 substituted alkenyl.
3. The small molecule semiconductor of claim 1 , wherein the small molecule semiconductor has the structure of one of Formulas (I-a) to (I-f):
wherein each R 3 is independently selected from hydrogen, C 3 -C 16 alkyl, alkoxy, and alkylthio.
4. The small molecule semiconductor of claim 1 , having a band gap of from about 1.8 to about 3.5 eV.
5. A semiconductor composition comprising:
a polymer binder; and
a small molecule semiconductor of Formula (I):
wherein R 1 and R 2 are independently selected from alkenyl, substituted alkenyl, alkynyl, substituted alkynyl, aryl, substituted aryl, alkoxy, alkylthio, alkylsilyl, and halogen.
6. The semiconductor composition of claim 5 , wherein R 1 and R 2 are independently C 4 -C 36 substituted alkenyl.
7. The semiconductor composition of claim 5 , wherein the small molecule semiconductor has the structure of one of Formulas (I-a) to (I-f):
wherein each R 3 is independently selected from hydrogen, C 3 -C 16 alkyl, alkoxy, and alkylthio.
8. The semiconductor composition of claim 5 , wherein the polymer binder is polystyrene, poly(α-methyl styrene), poly(4-methyl styrene), poly(alpha-methyl styrene-co-vinyl toluene), poly(styrene-block-butadiene-block-styrene), poly(styrene-block-isopene-block-styrene), poly (vinyl toluene), a terpene resin, poly(styrene-co-2,4-dimethylstyrene), poly(chlorostyrene), poly(styrene-co-a-methyl styrene), poly(styrene-co-butadiene), a polycarbazole, a polytriarylamine, poly(N-vinylcarbazole), or mixtures thereof.
9. The semiconductor composition of claim 5 , wherein the polymer binder is a styrene-based polymer.
10. The semiconductor composition of claim 9 , wherein the styrene-based polymer has a weight average molecular weight of from about 40,000 to about 2,000,000.
11. The semiconductor composition of claim 5 , wherein the weight ratio of the small molecule semiconductor to the polymer binder is from 5:1 to about 2:3.
12. An electronic device comprising a semiconducting layer, the semiconducting layer comprising:
a small molecule semiconductor of Formula (I):
wherein R 1 and R 2 are independently selected from alkenyl, substituted alkenyl, alkynyl, substituted alkynyl, aryl, substituted aryl, alkoxy, alkylthio, alkylsilyl, and halogen.
13. The electronic device of claim 12 , wherein R 1 and R 2 are independently C 4 -C 36 substituted alkenyl.
14. The electronic device of claim 12 , wherein the small molecule semiconductor has the structure of one of Formulas (I-a) to (I-f):
wherein each R 3 is independently selected from hydrogen, C 3 -C 16 alkyl, alkoxy, and alkylthio.
15. The electronic device of claim 12 , wherein the semiconducting layer further comprises a polymer binder.
16. The electronic device of claim 15 , wherein the polymer binder is polystyrene, poly(α-methyl styrene), poly(4-methyl styrene), poly(alpha-methyl styrene-co-vinyl toluene), poly(styrene-block-butadiene-block-styrene), poly(styrene-block-isopene-block-styrene), poly (vinyl toluene), a terpene resin, poly(styrene-co-2,4-dimethylstyrene), poly(chlorostyrene), poly(styrene-co-a-methyl styrene), poly(styrene-co-butadiene), a polycarbazole, a polytriarylamine, poly(N-vinylcarbazole), or mixtures thereof.
17. The electronic device of claim 15 , wherein the polymer binder is a styrene-based polymer.
18. The electronic device of claim 17 , wherein the styrene-based polymer has a weight average molecular weight of from about 40,000 to about 2,000,000.
19. The electronic device of claim 12 , further comprising a dielectric layer;
wherein the dielectric layer comprises a modified surface; and
wherein the semiconducting layer is in direct contact with the modified surface.
20. The electronic device of claim 19 , wherein the modified surface has been modified with an organosilane.