TIO2-CONTAINING QUARTZ GLASS SUBSTRATE
An object of the present invention is to provide a TiO 2 -containing quartz glass substrate which, when used as a mold base for nanoimprint lithography, can form a concavity and convexity pattern having a dimensional variation falling within ±10%. The invention relates to a TiO 2 -containing quartz glass substrate: in which a coefficient of thermal expansion in the range of from 15 to 35° C. is within ±200 ppb/° C.; a TiO 2 concentration is from 4 to 9 wt %; and a TiO 2 concentration distribution, in a substrate surface on the side where a transfer pattern is to be formed, is within ±1 wt %.
1 . A method for conducting photo-nanoimprint lithography comprising:
forming a light-curable resin layer on a substrate;
pressing a mold having a desired transfer patter against the resin layer on the substrate; and
irradiating the resin layer with a ultraviolet light,
wherein the mold comprises a mold base, and the mold base is a TiO 2 -containing quartz glass substrate having:
a coefficient of thermal expansion in the range of from 15 to 35° C. of within ±200 ppb/° C.;
a TiO 2 concentration of from 4 to 9 wt %; and
a TiO 2 concentration distribution, in a substrate surface on the side where a transfer pattern is to be formed, of within ±1 wt %.
2 . A method for conducting heat-cycle nanoimprint lithography comprising:
forming a resin for heat-cycle nanoimprint lithography on a substrate;
pressing a heated mold against the resin; and
wherein the mold comprises a mold base, and the mold base is a TiO 2 -containing quartz glass substrate having:
a coefficient of thermal expansion in the range of from 15 to 200° C. of within ±200 ppb/° C.;
a TiO 2 concentration of from 6 to 9 wt %; and
a TiO 2 concentration distribution, in a substrate surface on the side where a transfer pattern is to be formed, of within ±1 wt %.
3 . The method according to claim 1 , wherein the TiO 2 -containing quartz glass substrate has a TiO 2 concentration distribution, in a surface-neighboring region from the substrate surface to a depth of 50 μm on the side where a transfer pattern is to be formed, of within ±1 wt %.
4 . The method according to claim 1 , wherein the TiO 2 -containing quartz glass substrate has a fictive temperature distribution, in the substrate surface on the side where a transfer pattern is to be formed, of within ±100° C.
5 . The method according to claim 4 , wherein the TiO 2 -containing quartz glass substrate has a fictive temperature distribution, in the surface-neighboring region from the substrate surface to a depth of 50 μm on the side where a transfer pattern is to be formed, of within ±100° C.
6 . The method according to claim 1 , wherein the TiO 2 -containing quartz glass substrate has a halogen concentration of 2,000 ppm or more; and a halogen concentration distribution, in the substrate surface on the side where a transfer pattern is to be formed, of within ±2,000 ppm.
7 . The method according to claim 6 , wherein the TiO 2 -containing quartz glass substrate has a halogen concentration distribution, in the surface-neighboring region from the substrate surface to a depth of 50 μm on the side where a transfer pattern is to be formed, of within ±2,000 ppm.
8 . The method according to claim 6 , wherein the halogen element is chlorine or fluorine.
9 . The method according to claim 2 , wherein the TiO 2 -containing quartz glass substrate has a TiO 2 concentration distribution, in a surface-neighboring region from the substrate surface to a depth of 50 μm on the side where a transfer pattern is to be formed, of within ±1 wt %.
10 . The method according to claim 2 , wherein the TiO 2 -containing quartz glass substrate has a fictive temperature distribution, in the substrate surface on the side where a transfer pattern is to be formed, of within ±100° C.
11 . The method according to claim 10 , wherein the TiO 2 -containing quartz glass substrate has a fictive temperature distribution, in the surface-neighboring region from the substrate surface to a depth of 50 μm on the side where a transfer pattern is to be formed, of within ±100° C.
12 . The method according to claim 2 , wherein the TiO 2 -containing quartz glass substrate has a halogen concentration of 2,000 ppm or more; and a halogen concentration distribution, in the substrate surface on the side where a transfer pattern is to be formed, of within ±2,000 ppm.
13 . The method according to claim 12 , wherein the TiO 2 -containing quartz glass substrate has a halogen concentration distribution, in the surface-neighboring region from the substrate surface to a depth of 50 μm on the side where a transfer pattern is to be formed, of within ±2,000 ppm.
14 . The method according to claim 12 , wherein the halogen element is chlorine or fluorine.