Deposition method for passivation of silicon wafers
View Patent ↗A substrate is mounted onto an elevated substrate support of a substrate carrier plate. The substrate carrier plate with the substrate is then placed in a plasma reactor. Due to the elevated substrate support, both opposite sides of the substrate are exposed to the plasma and are therefore coated with an electrical passivation layer.
1. A substrate carrier plate for carrying a silicon wafer for the manufacturing of a semiconductor device during a deposition process for depositing a double-sided deposition of an amorphous hydrogenated carbon layer on first and second bevels of the wafer in a plasma reactor chamber,
wherein the wafer includes a first main side having the first bevel on a border of the first main side, and a second main side having a central area and the second bevel on a border of the second main side surrounding the central area, the second main side being arranged opposite the first main side, and
wherein the substrate carrier plate comprises:
a substrate support for carrying the wafer,
wherein the substrate support is formed such that when the wafer is placed on the substrate support, only the central area of the second main side comes in contact with the substrate support so that the amorphous hydrogenated carbon layer is deposited on both the first and second bevels of the wafer on the opposite first and second main sides of the wafer, respectively, when the central area of the second main side is in contact with the substrate support.
2. The substrate carrier plate as in claim 1 , comprising a substrate support,
wherein the substrate support has a surface area in a surface plane, on which the central area of the wafer is to be placed, and
wherein the substrate carrier plate has a cross-section which diminishes with distance from the surface plane at least up to a first depth.
3. The substrate carrier plate as in claim 2 , comprising several substrate supports each for carrying a wafer.
4. The substrate carrier plate as in claim 1 , comprising several substrate supports each for carrying a respective wafer.
5. The substrate carrier plate as in claim 1 , wherein said substrate support is a separate part which is attached to said substrate carrier plate.
6. The substrate carrier plate as in claim 5 , wherein said substrate carrier plate comprises a substrate support configured to support a first wafer thereon, and to support at least one further wafer stacked on the first wafer.
7. The substrate carrier plate as in claim 1 , wherein said substrate carrier plate comprises a substrate support configured to support a first wafer thereon, and to support at least one further wafer stacked on the first wafer.
8. The substrate carrier plate as in claim 7 , comprising an additional substrate support arranged between each pair of adjacent wafers in the stack, the wafers from each pair of adjacent wafers being separated from each other by the additional substrate support, respectively.
9. The substrate carrier plate as in claim 8 , comprising cooling means arranged in said additional substrate support.
10. The substrate carrier plate as in claim 8 , comprising an electrically conducting connection arranged between said additional substrate support and at least one of (i) the substrate support, (ii) the substrate carrier plate, (iii) and an electrode of the substrate carrier plate.
11. A deposition apparatus for depositing a double-sided deposition of an amorphous hydrogenated carbon layer deposition on first and second bevels respectively arranged on opposing first and second surfaces of a silicon wafer, comprising:
a reaction chamber of a plasma reactor;
two parallel plate electrodes inside the reaction chamber of the plasma reactor;
a substrate carrier plate according to claim 7 having at least one wafer placed on the substrate support,
wherein the substrate carrier plate is arranged on one of the electrodes.
12. A deposition apparatus for depositing a double-sided deposition of an amorphous hydrogenated carbon layer deposition on first and second bevels respectively arranged on opposing first and second surfaces of a silicon wafer, comprising:
a reaction chamber of a plasma reactor;
two parallel plate electrodes inside the reaction chamber of the plasma reactor;
a substrate carrier plate according to claim 5 having at least one wafer placed on the substrate support,
wherein the substrate carrier plate is arranged on one of the electrodes.
13. The deposition apparatus as in claim 12 , comprising cooling means for cooling the wafer during the deposition process.
14. The deposition apparatus as in claim 13 , wherein said cooling means are arranged in at least one of (i) the substrate carrier plate, (ii) the substrate support of the substrate carrier plate, a (iii) a surface of a shadow mask covering the wafer, the surface of the shadow mask facing the other one of the two plate electrodes.
15. The deposition apparatus as in claim 13 , wherein said cooling means are arranged in or adjacent to the one of the electrodes on which the substrate carrier plate is arranged.
16. The deposition apparatus as in claim 15 , wherein said cooling means are arranged in at least one of (i) the substrate carrier plate, (ii) the substrate support of the substrate carrier plate, a (iii) a surface of a shadow mask covering the wafer, the surface of the shadow mask facing the other one of the two plate electrodes.
17. The substrate carrier plate as in claim 1 , wherein the substrate support is cylindrical.
18. The substrate carrier plate as in claim 1 , wherein said substrate carrier plate comprises cooling means arranged in said substrate support.
19. The substrate carrier plate as in claim 1 , wherein said substrate support is elevated from said substrate carrier plate.