Submounts for Semiconductor Lasers
View Patent ↗A submount for a semiconductor laser. The submount has a layer of silicon carbide (SiC) and a layer of aluminum nitride (AlN) deposited on the layer of SiC. The submount is bonded to the InP-based laser by a hard solder applied to the AlN layer. Preferably, the thickness of the AlN layer is ten to twenty microns, the thickness of the SiC layer is two hundred fifty microns, and the solder is a gold-tin (AuSn) eutectic. The semiconductor laser may be a quantum cascade laser (QCL). Similar combinations of submount materials can be found for other semiconductor laser material systems and types.
1. A mounted quantum cascade laser (QCL) comprising:
(a) a QCL;
(b) a substrate comprising a layer of silicon carbide (SiC) with a thickness of 250 μm, and a layer of aluminum nitride (AlN) deposited on the layer of SiC, the layer of AlN having a thickness of 20 μm, the layer of AlN having a metalized area that is metalized and patterned for electrical interconnections and laser bonding; and
(c) a gold-tin (AuSn) eutectic applied to the metalized area of the AlN layer of the substrate, the AuSn eutectic bonding the substrate to the QCL.
2. A submount for a semiconductor laser, the submount comprising:
(a) a layer of silicon carbide (SiC) having a thickness;
(b) a layer of aluminum nitride (AlN) deposited on the layer of SiC, the layer of AlN having a thickness; and
(c) a hard solder applied to the layer of AlN for bonding to the semiconductor laser.
3. The submount of claim 2 , the layer of AlN also having a bonding area that is metalized and patterned for electrical interconnections and laser bonding, wherein the hard solder is applied to the bonding area of the MN layer for bonding to the semiconductor laser.
4. The submount of claim 2 , the thickness of the AlN layer being up to ten percent the thickness of the SiC layer.
5. The submount of claim 4 , the thickness of the SiC layer being 250 μm.
6. The submount of claim 4 , the thickness of the AlN layer being 20 μm.
7. The submount of claim 2 , the thickness of the MN layer being up to twenty-five microns, and the thickness of the SiC layer being two hundred fifty microns.
8. The submount of claim 2 , the thickness of the AlN layer being twenty microns, and the thickness of the SiC layer being two hundred fifty microns.
9. The submount of claim 2 , the hard solder being a gold-tin (AuSn) eutectic.
10. The submount of claim 2 , the semiconductor laser being a diode laser.
11. The submount system of claim 2 , the semiconductor laser being a quantum cascade laser.
12. A submount system for an indium phosphide (InP) based semiconductor laser, the submount system comprising:
(a) a submount comprising a layer of silicon carbide (SiC) having a thickness and a layer of aluminum nitride (AlN) deposited on the layer of SiC, the layer of AlN having a thickness; and
(b) a hard solder applied to the AlN layer, the hard solder bonding the submount to the InP-based semiconductor laser.
13. The submount system of claim 12 , the thickness of the AlN layer being up to ten percent the thickness of the SiC layer.
14. The submount system of claim 13 , the thickness of the SiC layer being up to 250 μm.
15. The submount system of claim 13 , the thickness of the SiC layer being 250 μm.
16. The submount system of claim 13 , the thickness of the AlN layer being 20 μm.
17. The submount system of claim 12 , the thickness of the AlN layer being up to twenty-five microns, and the thickness of the SiC layer being two hundred fifty microns.
18. The submount system of claim 12 , the thickness of the AlN layer being twenty microns, and the thickness of the SiC layer being two hundred fifty microns.
19. The submount system of claim 12 , the hard solder being a gold-tin (AuSn) eutectic.
20. The submount system of claim 12 , the layer of AlN also having a bonding area that is metalized and patterned for electrical interconnections and laser bonding, wherein the hard solder is applied to the bonding area of the AlN layer for bonding to the semiconductor laser.
21. The submount system of claim 12 , the InP-based semiconductor laser being a quantum cascade laser.
22. The submount system of claim 12 , the InP-based semiconductor laser being a quantum cascade laser producing more than 2.5 watts of continuous wave optical power at a wavelength of 4.6 microns.