Transflective liquid crystal display device having a thin film transistor and manufacturing method thereof
View Patent ↗There are provided a thin film transistor substrate for transflective liquid crystal display device (LCD) and a manufacturing method thereof, which can reduce manufacturing cost and simplifying manufacturing processes. In the method, a thin film transistor is formed on a reflection region of a device substrate defined by the reflection region and a transmission region. A passivation layer is formed on the thin film transistor so as to expose a drain electrode of the thin film transistor and to cover the thin film transistor. A pixel electrode is formed on the transmission and reflection regions. The pixel electrode has a structure of a first pixel electrode electrically connected to the drain electrode and a second pixel electrode formed to have an embossed pattern on the first pixel electrode. A reflective layer is formed on the second electrode pixel having the embossed pattern on the reflection region.
1. A transflective liquid crystal display (LCD) device having a thin film transistor, comprising:
a device substrate having a reflection region and a transmission region;
the thin film transistor formed on the reflection region of the device substrate and having a drain electrode;
a passivation layer formed on the thin film transistor and exposing the drain electrode;
a pixel electrode formed in a stacked structure comprising:
a first pixel electrode electrically connected to the drain electrode; and
a second pixel electrode formed to have an embossed pattern on the first pixel electrode; and
a reflective layer formed on the second pixel electrode and formed in the reflection region of the device substrate,
wherein the second pixel electrode is formed of a transparent conductive material, and
wherein an etch rate of the second pixel electrode is higher than an etch rate of the first pixel electrode.
2. The transflective LCD device according to claim 1 , wherein the first pixel electrode is formed of indium tin oxide (ITO), tin oxide (TO) or indium zinc oxide (IZO), and
wherein the second pixel electrode is formed of zinc oxide (ZnO) or ZnO alloy.
3. The transflective LCD device according to claim 1 , wherein the embossed pattern is formed on the reflection region and the transmission region of the device substrate.
4. The transflective LCD device according to claim 1 , wherein the embossed pattern has a round shape.
5. The transflective LCD device according to claim 1 , wherein a surface of the reflective layer has round concave and convex portions corresponding to a lower part of the embossed pattern.
6. The transflective LCD device according to claim 1 , wherein the reflective layer is formed of an opaque conductive material.
7. A transflective liquid crystal display (LCD) device having a thin film transistor, comprising:
a device substrate having a reflection region and a transmission region;
the thin film transistor formed on the reflection region of the device substrate and having a drain electrode;
a passivation layer formed on the thin film transistor and exposing the drain electrode;
a pixel electrode formed in a stacked structure comprising:
a first pixel electrode electrically connected to the drain electrode; and
a second pixel electrode formed to have an embossed pattern on the first pixel electrode; and
a reflective layer formed on the second pixel electrode and formed in the reflection region of the device substrate,
wherein a thickness of the second pixel electrode is greater than a thickness of the first pixel electrode.
8. A transflective liquid crystal display (LCD) device having a thin film transistor, comprising:
a device substrate having a reflection region and a transmission region;
the thin film transistor formed on the reflection region of the device substrate and having a drain electrode;
a passivation layer formed on the thin film transistor and exposing the drain electrode; and
a pixel electrode formed on the device substrate having the passivation layer formed on the thin film transistor, wherein the pixel electrode comprises a first pixel electrode electrically connected to the drain electrode and a second pixel electrode formed to have an embossed pattern on the first pixel electrode,
wherein the second pixel electrode is formed of a transparent conductive material, and wherein an etch rate of the second pixel electrode is higher than an etch rate of the first pixel electrode.