Display panel and method of manufacturing the same
View Patent ↗In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
1. A method of manufacturing a display panel, comprising:
preparing a first substrate;
forming a gate line on the first substrate;
forming a semiconductor pattern partially overlapped with the gate line;
forming a data line on the first substrate to define a pixel area together with the gate line;
forming a source electrode branched from the data line in the pixel area;
forming a drain electrode spaced apart from the source electrode in the pixel area and the drain electrode comprising a same material as the source electrode;
forming a pixel electrode electrically connected to the drain electrode in the pixel area; and
combining the first substrate and a second substrate facing the first substrate,
wherein the source and drain electrodes are formed by:
forming on the first substrate, an aluminum based alloy layer containing a sufficient amount of nickel to substantially inhibit corrosion during dry etching of the aluminum based alloy layer; and
patterning the aluminum based alloy layer.
2. The method of claim 1 , wherein the gate line comprises a same material as the data line.
3. The method of claim 1 , wherein the aluminum based alloy layer further comprises lanthanum.
4. The method of claim 1 , wherein the aluminum based alloy layer further comprises boron.
5. The method of claim 1 , wherein the data line, the source electrode, and the drain electrode are formed by:
forming a conductive layer comprising at least one of molybdenum, titanium, and tantalum on the first substrate prior to forming the aluminum based alloy layer; and
patterning the conductive layer.
6. The method of claim 5 , wherein the aluminum based alloy comprising the conductive layer has a (111) preferential orientation.
7. The method of claim 5 , wherein the semiconductor pattern is formed under the source and drain electrodes and makes contact with the conductive layer.
8. The method of claim 5 , wherein the conductive layer has a thickness of about 50 angstroms to about 1000 angstroms.
9. The method of claim 1 , wherein the data line, the source electrode, and the drain electrode are shaped by a dry etching method.