MEMS device having a movable electrode
A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
1. A microelectromechanical system (MEMS) device, comprising:
a semiconductor substrate;
a p-type well formed on the semiconductor substrate;
an insulating layer formed on the p-type well; and
a MEMS including a first fixed electrode supporting a movable electrode and a second fixed electrode formed in an opposite direction to the movable electrode,
wherein the first fixed electrode and the second fixed electrode are formed on the insulating layer on the upper side of the p-type well,
wherein a positive voltage is applied to at least one of the first fixed electrode and the second fixed electrode.
2. The MEMS device according to claim 1 , wherein a voltage is applied to the p-type well so that the p-type well is in a depletion state.
3. The MEMS device according to claim 2 ,
wherein the semiconductor substrate is an n-type substrate,
wherein Vp>0, Vwell≦0, and 0<|Vp−Vwell|<|Vth| are satisfied when Vp is a bias voltage of the MEMS, Vwell is the voltage applied to the p-type well below the MEMS, and Vth is a threshold voltage at which an inversion layer is formed in the p-type well.
4. The MEMS device according to claim 1 , wherein the movable electrode is formed continuously with the first fixed electrode.
5. The MEMS device according to claim 1 , wherein the movable electrode is formed continuously with the first fixed electrode.
6. A microelectromechanical system (MEMS) device, comprising:
a semiconductor substrate;
a n-type well formed on the semiconductor substrate;
an insulating layer formed on the n-type well; and
a MEMS including a first fixed electrode supporting a movable electrode and a second fixed electrode formed in an opposite direction to the movable electrode,
wherein the first fixed electrode and the second fixed electrode are formed on the insulating layer on the upper side of the n-type well,
wherein an negative voltage is applied to at least one of the first fixed electrode and the second fixed electrode.
7. The MEMS device according to claim 6 , wherein a voltage is applied to the n-type well so that the n-type well is in a depletion state.
8. The MEMS device according to claim 6 ,
wherein the semiconductor substrate is a p-type substrate,
wherein Vp<0, Vwell≧0, and 0<|Vp−Vwell|<|Vth| are satisfied when Vp is a bias voltage of the MEMS, Vwell is the voltage applied to the n-type well below the MEMS, and Vth is a threshold voltage at which an inversion layer is formed in the n-type well.