METHOD OF FORMING LIGHT-EMITTING DIODE

1 . A method of forming light-emitting diode, comprising:

providing a growth substrate on which a sacrificial layer and an epitaxial layer are sequentially formed;

forming one or more epitaxial layer openings passing through the epitaxial layer and exposing the sacrificial layer;

providing a supporting layer having one or more supporting layer openings;

connecting at least one epitaxial layer opening with at least one supporting layer opening; and

decreasing a volume of the sacrificial layer to separate the growth substrate from the epitaxial layer.

2 . The method of claim 1 , wherein the step of connecting the at least one epitaxial layer opening with the at least one supporting layer opening comprises:

penetrating the supporting layer.

3 . The method of claim 1 , wherein the step of decreasing the volume of the sacrificial layer comprises: providing an etchant to contact the sacrificial layer through the epitaxial layer opening and the supporting layer opening.

4 . The method of claim 3 , wherein the growth substrate comprises a material selected from the group consisting of nitrogen, aluminum, gallium, arsenic, zinc, silicon, and oxygen; the sacrificial layer comprises a material selected from the group consisting of aluminum and arsenic; the supporting layer comprises a material selected from the group consisting of photo resister, metal, and plating metal; and the etchant comprises citric acid.

5 . A method of forming light-emitting diode, includes:

providing a growth substrate having one or more substrate openings passing through the growth substrate;

forming a sacrificial layer on the growth substrate;

forming a epitaxial layer on the sacrificial layer, the epitaxial layer having one or more epitaxial layer openings passing through the epitaxial layer;

providing a supporting substrate to connect with the epitaxial layer; and

selectively etching the sacrificial layer to separate the growth substrate from epitaxial layer.

6 . The method of claim 5 , wherein the growth substrate surrounds the substrate opening.

7 . The method of claim 5 , wherein the step of forming the sacrificial layer comprises: forming one or more sacrificial layer openings, passing through the sacrificial layer, to connect the one or more substrate openings.

8 . The method of claim 7 , wherein the sacrificial layer surrounds the sacrificial layer opening.

9 . The method of claim 7 , wherein at least one epitaxial layer opening is connected with at least one sacrificial layer opening.

10 . The method of claim 7 , wherein the step of selectively etching the sacrificial layer comprises: providing an etchant to contact the sacrificial layer through the one or more substrate openings and the one ore more sacrificial layer openings.

11 . The method of claim 10 , wherein the growth substrate comprises a material selected fro the group consisting of nitrogen, aluminum, gallium, arsenic, zinc, silicon, and oxygen; the sacrificial layer comprises a material selected from the group consisting of aluminum and arsenic; the supporting substrate comprises a material selected from the group consisting of glass, metal, semiconductor, plastics, and ceramics; and the etchant comprises citric acid.

12 . A method of forming light-emitting diode, includes:

providing a growth substrate on which a sacrificial layer and an epitaxial layer are sequentially formed;

providing a supporting substrate having an upper surface and a lower surface, the lower surface having one or more recesses;

connecting the lower surface with the epitaxial layer;

removing a portion of the supporting substrate from the upper surface to expose at least one recess;

etching the epitaxial layer by using the supporting substrate as a mask to form one or more epitaxial layer openings passing through the epitaxial layer and exposing the sacrificial layer; and

selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.

13 . The method of claim 12 , wherein the step of selectively etching the sacrificial layer comprises: providing an etchant to contact the sacrificial layer through the recess and the sacrificial layer opening.

14 . The method of claim 13 , wherein the growth substrate comprises a material selected fro the group consisting of nitrogen, aluminum, gallium, arsenic, zinc, silicon, and oxygen; the sacrificial layer comprises a material selected from the group consisting of aluminum and arsenic; the supporting substrate comprises a material selected from the group consisting of Si. A 2 lO 3 , metal, semiconductor, plastics, and ceramics; and the etchant comprises citric acid.

15 . A method of forming light-emitting diode, includes:

providing a growth substrate on which a sacrificial layer and an epitaxial layer are sequentially formed;

providing a supporting substrate;

forming one or more supporting substrate openings through the supporting substrate;

connecting the supporting substrate with the epitaxial layer;

etching the epitaxial layer by using the supporting substrate as a mask to form one or more epitaxial layer openings passing through the epitaxial layer and exposing the sacrificial layer; and

selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.

16 . The method of claim 15 , wherein the supporting substrate surrounds the supporting substrate opening.

17 . The method of claim 15 , wherein the step of selectively etching the sacrificial layer comprises: providing an etchant to contact the sacrificial layer through the supporting substrate opening and the epitaxial layer opening.

18 . The method of claim 17 , wherein the growth substrate comprises a material selected fro the group consisting of nitrogen, aluminum, gallium, arsenic, zinc, silicon, and oxygen; the sacrificial layer comprises a material selected from the group consisting of aluminum and arsenic; the supporting substrate comprises a material selected from the group consisting of Si. A 2 lO 3 , metal, semiconductor, plastics, and ceramics; and the etchant comprises citric acid.

19 . The method of claim 15 , wherein the step of providing the supporting substrate comprises: connecting the supporting substrate with a temporary substrate; and removing the temporary substrate after connecting the supporting substrate with the epitaxial layer and before etching the epitaxial layer.

20 . The method of claim 15 , wherein the temporary substrate comprises a material selected from the group consisting of glass, metal, semiconductor, plastics, and ceramics.