Semiconductor light-emitting device with a protection layer
View Patent ↗The present application discloses a semiconductor light-emitting device with a protection layer. The structure includes a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer, and a light-emitting unit on the second connecting layer. The protection layer is highly insulative and can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate.
1. A light-emitting device comprising:
a heat dispersion substrate;
a first connecting layer on the heat dispersion substrate;
a protection layer on the first connecting layer wherein the protection layer is highly insulative;
a second connecting layer on the protection layer; and
a light-emitting unit comprising an epitaxial structure on the second connecting layer;
wherein the protection layer can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate, and the light-emitting device is devoid of a growth substrate on which the epitaxial structure is originally grown.
2. The light-emitting device according to claim 1 , further comprising a reflection layer between the first connecting layer and the protection layer.
3. The light-emitting device according to claim 2 , further comprising an adhesive layer between the reflection layer and the protection layer.
4. The light-emitting device according to claim 3 , wherein the adhesive layer comprises indium tin oxide, zinc oxide.
5. The light-emitting device according to claim 2 , wherein the reflection layer comprises aluminum, silver, or other high reflectivity materials.
6. The light-emitting device according to claim 1 , wherein the epitaxial structure comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.
7. The light-emitting device according to claim 1 , wherein the epitaxial structure comprises a roughened interface to increase the light extraction efficiency of the epitaxial structure.
8. The light-emitting device according to claim 1 , wherein the protection layer comprises an undoped gallium nitride or an undpoed III-V group material.
9. The light-emitting device according to claim 1 , wherein the protection layer further comprises a first surface and a second surface, wherein the area of the first surface is larger than the area of the second surface.
10. The light-emitting device according to claim 1 , wherein the first connecting layer comprises soldering tin, low temperature metal, and metal silicide.
11. The light-emitting device according to claim 1 , wherein the second connecting layer comprises polymer material, oxide, nitride, or diamond.