Multi-axis integrated MEMS devices with CMOS circuits and method therefor
An integrated multi-axis mechanical device and integrated circuit system. The integrated system can include a silicon substrate layer, a CMOS device region, four or more mechanical devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, on which any number of CMOS and mechanical devices can be configured. The mechanical devices can include MEMS devices configured for multiple axes or for at least a first direction. The CMOS layer can be deposited on the silicon substrate and can include any number of metal layers and can be provided on any type of design rule. The integrated MEMS devices can include, but not exclusively, any combination of the following types of sensors: magnetic, pressure, humidity, temperature, chemical, biological, or inertial. Furthermore, the overlying WLP layer can be configured to hermetically seal any number of these integrated devices.
1. An integrated multi-axis mechanical device and integrated circuit system, the system comprising:
a semiconductor substrate having a surface region and a backside region;
a CMOS integrated circuit device region formed overlying the surface region of the semiconductor substrate;
an interface region overlying the CMOS integrated circuit device region;
one or more regions overlying the interface region and configured for at least four different mechanical devices comprising at least:
a gyroscope device comprising at least a first gyro axis, a second gyro axis, and a third gyro axis;
an accelerometer device comprising at least a first accel axis, a second accel axis, and a third accel axis;
a magnetic field sensing device comprising at least a first mag axis, a second mag axis, and a third mag axis; and
a pressure sensor device configured to detect a force in at least a direction;
one or more bonding structures provided through a thickness of the semiconductor substrate, each of the bonding structures comprising a bonding pad, a via structure, and a pad structure;
wherein the interface region comprises a dielectric material; and
wherein the gyroscope, accelerometer, pressure sensor, magnetic field sensing devices being formed from a common material layer deposited overlying the interface region, each of the devices being electrically coupled to the CMOS integrated circuit device region.
2. The system of claim 1 wherein the gyroscope device, the accelerometer device, the magnetic field sensing device, and the pressure sensor device are formed within a vicinity of a planar region.
3. The system of claim 1 wherein the gyroscope is isolated from the accelerometer device.
4. The system of claim 1 wherein the pressure sensor device is isolated from the magnetic field sensing device.
5. The system of claim 1 wherein the first gyro axis represents an x-direction, the second gyro axis represents a y-direction, and the third gyro axis represents a z-direction for the gyroscope device.
6. The system of claim 1 wherein the first accel axis represents an x-direction, the second accel axis represents a y-direction, and the third accel axis represents a z-direction for the accelerometer device.
7. The system of claim 1 wherein the first mag axis represents an x-direction, the second mag axis represents a y-direction, and the third mag axis represents a z-direction for the magnetic field sensing device.
8. The system of claim 1 wherein the direction of the pressure sensor device is a z-direction.
9. The system of claim 1 wherein one or more portions of the gyroscope device, accelerometer device, and magnetic field sensing device are formed simultaneously.
10. The system of claim 1 wherein one or more portions of the gyroscope device, accelerometer device, and magnetic field sensing device are formed using at least a micromachining process.
11. An integrated multi-axis mechanical device and integrated circuit system, the system comprising:
a semiconductor substrate;
a CMOS integrated circuit device region formed overlying the semiconductor substrate;
an interface region overlying the CMOS integrated circuit device region, the interface region comprising a dielectric material;
one or more regions overlying the interface region and configured for at least four different mechanical devices, the different mechanical devices being electrically coupled to the CMOS integrated circuit device region, the different mechanical devices being formed from one or more common processed material layers disposed overlying the interface region, the different mechanical devices comprising at least:
a gyroscope device comprising at least a first gyro axis, a second gyro axis, and a third gyro axis;
an accelerometer device comprising at least a first accel axis, a second accel axis, and a third accel axis;
a magnetic field sensing device comprising at least a first mag axis, a second mag axis, and a third mag axis: and
a pressure sensor device configured to detect a force in at least a direction;
an enclosure overlying the interface region, the enclosure having an upper cover region; and
one or more bonding structures provided through a thickness of the enclosure, each of the one or more bonding structures comprising a bonding pad, a via structure, and a pad structure.
12. The system of claim 11 ,
wherein the semiconductor substrate is encapsulated within a package, and
wherein the system further comprising:
a memory configured to store executable instructions;
a display configured to output data to a user; and
a processor electrically coupled to the memory and to the package, wherein the processor is configured to execute executable instructions from the memory, wherein the processor is configured to receive signals from one or more mechanical devices in response to physical perturbations, wherein the processor is configured to perform one or more tasks in response to the signals from the one or more mechanical devices.