Mask for sequential lateral solidification and sequential lateral solidification apparatus having the same
View Patent ↗A mask for sequential lateral solidification (SLS) which is capable of preventing an overlapping region and a diagonal stain based on a crystallization pattern of an active layer. The mask for SLS, which moves in a first direction and selectively transmits a laser beam emitted by a laser emitting device, includes slits which are formed such that the width of a slit in the first direction is smaller than the width of the slit in a second direction, which is perpendicular to the first direction. Each of the slits is tilted by a predetermined angle with respect to the first direction.
1. A mask for sequential lateral solidification (SLS), which moves in a first direction and selectively transmits a laser beam emitted by a laser emitting device, the mask comprising:
a mask body; and
a plurality of slits extending through the mask body, a width of each slit in the first direction is smaller than a width of the slit in a second direction, which is perpendicular to the first direction,
wherein each of the slits is tilted by a same predetermined angle with respect to the first direction.
2. The mask of claim 1 , wherein some of the slits are formed to be longer than others of the slits.
3. The mask of claim 1 , wherein at least one end of each of the slits extends out of a region to which the laser beam is irradiated.
4. The mask of claim 1 , wherein the plurality of slits are grouped into one or more blocks.
5. The mask of claim 1 , wherein a total number of the slits is an odd number.
6. A sequential lateral solidification (SLS) apparatus for use in forming crystallization patterns on a substrate, the apparatus comprising:
a laser emitting device;
a stage on which the substrate is mounted and to which a laser beam emitted by the laser emitting device is irradiated; and
the mask for SLS of claim 1 disposed between the laser emitting device and the substrate such that the emitted laser beam passes through the slits.
7. The SLS apparatus of claim 6 , wherein the mask for SLS is designed to maximize an X-pitch and a Y-pitch.
8. The SLS apparatus of claim 6 , wherein some of the slits are formed to be longer than other slits.
9. The SLS apparatus of claim 8 , wherein the mask for SLS is designed to maximize an X-pitch and a Y-pitch.
10. The SLS apparatus of claim 6 , wherein at least one end of each of the slits extends out of a region to which the laser beam is irradiated.
11. The SLS apparatus of claim 10 , wherein the mask for SLS is designed to maximize an X-pitch and a Y-pitch.
12. The SLS apparatus of claim 6 , wherein the plurality of slits are grouped into one or more blocks.
13. The SLS apparatus of claim 12 , wherein the mask for SLS is designed to maximize an X-pitch and a Y-pitch.
14. The SLS apparatus of claim 6 , wherein a total number of the slits is an odd number.
15. The SLS apparatus of claim 14 , wherein the mask for SLS is designed to maximize an X-pitch and a Y-pitch.