Chuck for chemical vapor deposition systems and related methods therefor

1. A chemical vapor deposition system, comprising:

a chuck configured to provide mechanical support to a vertically oriented filament, comprising:

a body having a first section comprising a well extending downwardly within the body, the well including a first end and a second end, the well including only one opening extending further downwardly within the body, the opening comprising a filament channel sized and configured to receive an end of the filament, wherein a diameter of the well is larger than a diameter of the filament channel, and wherein a bottom surface of the well is substantially flat and directly connected to the opening of the filament channel;

a plurality of slots disposed circumferentially around the well, each of the plurality of slots extending substantially along a length of the well;

and a second section proximate the first section, the second section having a coaxially disposed electrode channel; and an electrode in communication with the electrode channel;

and wherein the well of the chuck is defined by a plurality of slats extended circumferentially from the bottom surface of the well to an end of the first section.

2. The chemical vapor deposition system of claim 1 , wherein each of the plurality of slats of the chuck is separated by a window, each window extending at least partially along a length of an adjacent slat.

3. The chemical vapor deposition system of claim 1 , the chuck having a circular cylindrical body, and wherein the well is concentrically disposed within the body and is at least partially defined by a wall circumferentially surrounding the well.

4. The chemical vapor deposition system of claim 1 , wherein the well, the filament channel, and the electrode channel are concentrically disposed along a longitudinal axis of the chuck.

5. A chemical vapor deposition system, comprising:

a chuck configured to mechanically support a filament, the chuck having a body including an outer frustoconical section proximate a contacting section, the outer frustoconical section having a filament channel sized and configured to receive an end of the filament, the outer frustoconical section concentrically surrounding a well disposed above the filament channel, the well having a diameter larger than a diameter of the filament channel, and the contacting section having an electrode channel, and each of the well, filament channel, and electrode channel concentrically disposed and aligned along a longitudinal axis;

wherein the chuck further comprises a plurality of slots disposed circumferentially around the well, each of the plurality of slots extending substantially along a length of the well;

a filament having an end secured in the filament channel, and an electrode in communication with the electrode channel, wherein the well includes a first end and a second end, and wherein a bottom surface of the well is substantially flat;

wherein the well of the chuck is defined by a plurality of slats extended circumferentially from the bottom surface of the well.

6. The chemical vapor deposition system of claim 5 , further comprising a second chuck, the second chuck having a contacting section, a filament channel, and an outer frustoconical section circumferentially surrounding a well, wherein the filament has a second end secured in the filament channel of the second chuck.

7. The chemical vapor deposition system of claim 6 , wherein the filament is electrically connected to an electrical current source through the contacting sections of the first and second chucks.

8. The chemical vapor deposition system of claim 5 , wherein the outer frustoconical section of the chuck has a plurality of windows fluidly connecting an interior volume of the well to an exterior environment of the chuck.

9. The chemical vapor deposition system of claim 8 , wherein each of the plurality of windows of the chuck extend substantially along at least a portion of the well parallel to a longitudinal axis of the outer frustoconical section.