Method of fabricating a thin-film device
View Patent ↗A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.
1. A method of fabricating a thin-film device, including:
forming an oxide-semiconductor film on a first electrical insulator;
forming a second electrical insulator on said oxide-semiconductor film,
said oxide-semiconductor film defining an active layer,
said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulating insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers; and
oxidizing said oxide-semiconductor film to render a density of oxygen holes in at least one of said first and second interlayer layers smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, a gate metal film, a gate insulating film as said first electrical insulator, said oxide-semiconductor film, a source/drain metal film, and a protection insulating film as said second electrical insulator, and
wherein said oxidizing and the formation of said protection insulating film are carried out in this order without exposing said oxide-semiconductor film and said protection insulating film to atmosphere after said source/drain metal film was patterned.