Optoelectronic semiconductor device
View Patent ↗An embodiment of the invention discloses an optoelectronic semiconductor device. The optoelectronic semiconductor comprises a unit having a plurality of electrical connectors with top surfaces; an insulating material surrounding each of the plurality of electrical connectors, wherein each of the top surfaces are exposed through the insulating material; a semiconductor system, having a side surface directly covered by the insulation material, electrically connected to the plurality of electrical connectors and being narrower in width than both of the unit and the insulating material; an electrode formed on the semiconductor system at a position not corresponding to the plurality of electrical connectors; and a layer provided on the semiconductor system at a side opposite to the electrode and configured to laterally exceed outside more than one outermost boundary of the plurality of electrical connectors.
1. An optoelectronic semiconductor device, comprising:
a unit having a plurality of electrical connectors with top surfaces;
an insulating material surrounding each of the plurality of electrical connectors and exposing each of the top surfaces;
a semiconductor system, electrically connected to the plurality of electrical connectors, having a side surface directly covered by the insulating material and being narrower in width than both of the unit and the insulating material;
an electrode formed on the semiconductor system at a position not corresponding to the plurality of electrical connectors; and
a layer provided on the semiconductor system at a side opposite to the electrode and arrange to laterally extend beyond more than one outermost boundary of the plurality of electrical connectors.
2. The optoelectronic semiconductor device of claim 1 , further comprising:
a reflector formed between the insulating material and the semiconductor system.
3. The optoelectronic semiconductor device of claim 1 , wherein at least one of the top surfaces does not extend beyond a side surface of the semiconductor system.
4. The optoelectronic semiconductor device of claim 1 , wherein at least one of the top surfaces does not overlap the insulating material.
5. The optoelectronic semiconductor device of claim 1 , further comprising:
an electrical conductor electrically supporting the semiconductor system.
6. The optoelectronic semiconductor device of claim 1 , further comprising:
a wavelength converting material formed on the semiconductor system.
7. The optoelectronic semiconductor device of claim 1 , wherein the plurality of electrical connectors are arranged in a matrix.
8. The optoelectronic semiconductor device of claim 1 , wherein the insulating material has a portion arranged between the unit and the semiconductor system, and located at a position corresponding to the electrode.
9. The optoelectronic semiconductor device of claim 1 , wherein the semiconductor system comprises:
at least two semiconductor layers having different electric properties, polarities, or dopants; and
a light-emitting layer between the two semiconductor layers.
10. An optoelectronic semiconductor device, comprising:
a plurality of electrical connectors having outermost boundaries;
an electrical conductor arranged to laterally extend beyond more than one of the outermost boundaries;
an insulating material having openings arranged to expose the plurality of electrical connectors;
a semiconductor system, electrically connected to the plurality of electrical connectors, having a side surface directly covered by the insulating material and being narrower in width than both of the electrical conductor and the insulating material; and
an electrode formed on the semiconductor system at a position not corresponding to the electrical conductor.
11. The optoelectronic semiconductor device of claim 10 , wherein the electrode is excluded from directly covering the plurality of electrical connectors.
12. The optoelectronic semiconductor device of claim 10 , further comprising:
a wavelength converting material formed on the semiconductor system.
13. The optoelectronic semiconductor device of claim 10 , further comprising:
a reflector formed between the insulating material and the semiconductor system.
14. The optoelectronic semiconductor device of claim 10 , wherein the insulating material has a portion arranged between the electrical conductor and the semiconductor system, and located at a position corresponding to the electrode.
15. An optoelectronic semiconductor device, comprising:
a plurality of electrical connectors having outermost boundaries;
an electrical conductor arranged to laterally extend beyond more than one of the outermost boundaries;
an insulating material having openings arranged to expose the plurality of electrical connectors;
a light-emitting layer, electrically connected to the plurality of electrical connectors, having a side surface directly covered by the insulating material and being narrower in width than both of the electrical conductor and the insulating material; and
an electrode formed on the light-emitting layer at a position not corresponding to the electrical conductor and at a side opposite to the electrical conductor.
16. The optoelectronic semiconductor device of claim 15 , wherein the electrode is excluded from directly covering the plurality of electrical connectors.
17. The optoelectronic semiconductor device of claim 15 , further comprising:
a reflector formed between the insulating material and the light-emitting layer.
18. The optoelectronic semiconductor device of claim 15 , wherein the plurality of electrical connectors are arranged in a matrix.
19. The optoelectronic semiconductor device of claim 15 , wherein the insulating material has a portion arranged between the electrical conductor and the semiconductor system, and located at a position corresponding to the electrode.
20. The optoelectronic semiconductor device of claim 1 , wherein the electrode does not directly contact the plurality of the electrical connectors.