Methods of cell population distribution assisted read margining
View Patent ↗A memory using techniques to extract the data content of its storage elements, when the distribution of stored states is degraded, is presented. If the distribution of stored states has degraded, secondary evaluations of the memory cells are performed using modified read conditions. Based upon the results of these supplemental evaluations, the memory device determines the read conditions at which to best decide the data stored.
1. A method of determining the data content of a memory device having a plurality of memory cells each storing one of at least two data states, comprising:
evaluating the memory cells using standard read conditions;
determining whether the memory cells evaluated using standard read conditions have an unacceptable level of error;
in response to determining that the memory cells evaluated using standard read conditions have an unacceptable level of error, performing evaluations of the memory cells using a plurality of auxiliary read conditions;
extracting information on the distribution of threshold values of the memory cells based on said evaluating the memory cells using the standard read conditions and the evaluations of the memory cells using the plurality of auxiliary read conditions; and
determining modified read conditions differing from the standard read conditions at which to evaluate the memory cells to determine their data content based on said information on the distribution of threshold values.
2. The method of claim 1 , wherein said extracting information on the distribution of threshold values of the memory cells includes comparing the number of memory cells evaluated using the standard read conditions, the number of memory cells evaluated using the plurality of auxiliary read conditions, and the rate of change of the number of memory cells evaluated at the standard and auxiliary read conditions.
3. The method of claim 1 , wherein said determining whether the memory cells evaluated using standard read conditions have an unacceptable level of error is based on an error correction code result.
4. The method of claim 1 , wherein the modified read conditions are one of said auxiliary read conditions.
5. The method of claim 1 , wherein the modified read conditions are read conditions other than one of standard read conditions and said auxiliary read conditions.
6. The method of claim 1 , wherein the plurality of read conditions use the same bias conditions, but differing reference points.
7. The method of claim 6 , wherein said reference points are current levels.
8. The method of claim 6 , wherein said reference points are voltage levels.
9. The method of claim 6 , wherein said reference points are time values.
10. The method of claim 1 , wherein the standard read conditions are a first set of bias conditions and the plurality of auxiliary read conditions are a plurality of auxiliary sets of bias conditions.
11. The method of claim 10 , wherein the first set of bias conditions and the auxiliary sets of bias conditions are distinguished from each other by a differing control gate voltage.
12. The method of claim 1 , wherein said memory cells are non-volatile memory cells.
13. The method of claim 12 , wherein said memory cells are charge storing devices.
14. The method of claim 13 , wherein said memory device is a flash memory.
15. The method of claim 1 , wherein said memory device includes a memory containing the memory cells and a controller, wherein the extracting information on the distribution of programmed state populations of the memory cells and the determining modified read conditions are performed within the memory.
16. The method of claim 1 , wherein said memory device includes a memory containing the memory cells and a controller, wherein the extracting information on the distribution of programmed state populations of the memory cells and the determining modified read conditions are performed by the controller.
17. The method of claim 1 , wherein said standard read conditions are established by one or more reference cells.