METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
A semiconductor device includes: a transistor including source and drain diffusion-layers, a gate insulating film and a gate electrode; first and second plugs formed in a first interlayer-insulating film and connected to the source and drain diffusion-layers, respectively; a third plug extending through a second interlayer-insulating film and connected to the first plug; a first interconnection-wire formed on the second interlayer-insulating film and connected to the third plug; a second interconnection-wire formed on a third interlayer-insulating film and intersecting the first interconnection-wire; a fourth interlayer-insulating film; a hole extending through the fourth, third and second interlayer-insulating films, the hole being formed such that a side surface of the second interconnection-wire is exposed; and a fourth plug filling the hole via an intervening dielectric film and connected to the second plug, wherein a capacitor is formed using the fourth plug, the second interconnection-wire and the dielectric film sandwiched therebetween.
1 . A method of fabricating a semiconductor device, comprising:
forming a first conductive plug connected to one of a source region and a drain region of a transistor, and a second conductive plug connected to the other of the regions, in a first interlayer insulating film covering the transistor;
forming a second interlayer insulating film covering the first and second conductive plugs;
forming a first hole extending through the second interlayer insulating film and then forming a third conductive plug filling the first hole, the third conductive plug being connected to the first conductive plug;
forming a first interconnection wire connected to the third conductive plug, the first interconnection wire being extending in a first direction;
forming a third interlayer insulating film covering the first interconnection wire;
forming a second interconnection wire extending in a second direction intersecting the first direction;
forming a fourth interlayer insulating film covering the second interconnection wire;
forming a second hole extending through the fourth, third and second interlayer insulating films to reach the second conductive plug, such that a side surface of the second interconnection wire is exposed;
forming a dielectric film on an inner wall of the second hole; and
forming a conductor in the second hole, connected to the second conductive plug, whereby a capacitor is formed using the conductor, the second interconnection wire and the dielectric film sandwiched therebetween.