Use of DC magnetron sputtering systems
View Patent ↗Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target.
1. A field-enhanced sputtering target comprising a sputtering material having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having at least one field-enhanced, protruding convex curvature feature positioned at a location corresponding to at least one poorly eroding area of the non-planar sputtering surface, the at least one poorly eroding area defined as an area corresponding to a reference, protruding convex curvature feature of an erosion profile of a reference sputtering target following erosion by use in a sputtering system, the reference sputtering target comprising a sputtering material having an identical composition as the sputtering material of the field-enhanced sputtering target, the reference sputtering target further comprising a planar sputtering surface prior to erosion by use in a sputtering system.
2. The field-enhanced sputtering target of claim 1 , wherein the field-enhanced sputtering target is circular in shape and includes a center, and the at least one field-enhanced, protruding convex curvature feature is positioned proximate an outer radial edge of the sputtering surface of the field-enhanced sputtering target.
3. The field-enhanced sputtering target of claim 1 , wherein the field-enhanced sputtering target further comprises at least one recessed sidewall groove.
4. The field-enhanced sputtering target of claim 1 , wherein the field-enhanced sputtering target further comprises a backing plate comprising a grooved flange.
5. The field-enhanced sputtering target of claim 4 , wherein the grooved flange is recessed.
6. The field-enhanced sputtering target of claim 1 , further comprising at least one additional field-enhanced, protruding convex curvature feature positioned at a location corresponding to at least one high erosion area of the non-planar sputtering surface of the field-enhanced sputtering target, the at least one high erosion area defined as an area corresponding to a non-protruding concave curvature feature of the erosion profile of the reference sputtering target.
7. The field-enhanced sputtering target of claim 1 , wherein the sputtering material of the reference sputtering target includes a first thickness and the at least one field-enhanced sputtering target includes a second thickness at a peak of the field-enhanced, protruding convex curvature feature, the first and second thicknesses being substantially equal.
8. The field-enhanced sputtering target of claim 1 , wherein the sputtering material of the reference sputtering target includes a first thickness and the at least one field-enhanced sputtering target includes a second thickness at a peak of the field-enhanced, protruding convex curvature feature, the first thickness being less than the second thickness.
9. The field-enhanced sputtering target of claim 1 , wherein the sputtering material of the reference sputtering target includes a first thickness and the at least one field-enhanced sputtering target includes a second thickness at a peak of the field-enhanced, protruding convex curvature feature, the first thickness being greater than the second thickness.
10. The field-enhanced sputtering target of claim 1 , wherein the field-enhanced sputtering target is circular in shape and includes a center, and the at least one field-enhanced, protruding convex curvature feature comprises a first annular convex curvature.
11. The field-enhanced sputtering target of claim 10 , wherein the at least one field-enhanced, protruding convex curvature feature further comprises a second annular convex curvature feature, the second annular convex curvature feature disposed radially outwardly of the first annular convex curvature feature and positioned at a location corresponding to at least one poorly eroding area of the non-planar sputtering surface of field-enhanced sputtering target.
12. The field-enhanced sputtering target of claim 11 , wherein the second annular convex curvature feature is positioned at an outer radial edge of the sputtering surface of the field-enhanced sputtering target.
13. The field-enhanced sputtering target of claim 10 , wherein the erosion profile of the reference sputtering target comprises an annular non-protruding concave curvature feature, and the at least one field-enhanced, protruding convex curvature feature further comprises a second annular convex curvature feature positioned at a location corresponding to the annular non-protruding concave curvature feature of the erosion profile of the reference sputtering target.
14. The field-enhanced sputtering target of claim 2 , wherein the at least one field-enhanced, protruding convex curvature feature further comprises an intermediate annular convex curvature feature disposed radially between the center and the outer radial edge, the intermediate annular convex curvature feature disposed at a radial extent from the center which corresponds to at least one reference, protruding convex curvature feature on the erosion profile of the reference sputtering target.
15. A method of producing a field-enhanced sputtering target, said method comprising the steps of:
identifying at least one reference, protruding convex curvature feature on an erosion profile of a reference sputtering target following erosion by use in a sputtering system, the reference sputtering target comprising a sputtering material and a planar surface prior to erosion by use in a sputtering system; and
manufacturing a field-enhanced sputtering target, the field-enhanced sputtering target comprising a sputtering material having an identical composition as the sputtering material of the reference sputtering target, the field-enhanced sputtering target having a non-planar sputtering surface prior to erosion by use in a sputtering system, and the non-planar sputtering surface of the field-enhanced sputtering target further having at least one field-enhanced, protruding convex curvature feature positioned at a location corresponding to at least one reference, protruding convex curvature feature of the erosion profile of the reference sputtering target.
16. The method of claim 15 , further comprising the additional steps of:
identifying at least one non-protruding concave curvature feature on the erosion profile of the reference sputtering target, and wherein said manufacturing step further comprises:
manufacturing the field-enhanced sputtering target to further comprise at least one additional field-enhanced, protruding convex curvature feature positioned at a location corresponding to at least one non-protruding concave curvature feature of the erosion profile of the reference sputtering target.
17. The method of claim 15 , wherein said manufacturing step further comprises:
manufacturing the field-enhanced sputtering target as circular in shape and including a center, with the at least one field-enhanced, protruding convex curvature feature being a first annular convex curvature feature.
18. The method of claim 17 , wherein the at least one field-enhanced, protruding convex curvature feature further comprises a second annular convex curvature feature, the second annular convex curvature feature disposed radially outwardly of the first annular convex curvature feature and positioned at a location corresponding to at least one poorly eroding area of the non-planar sputtering surface of the field-enhanced sputtering target.
19. The method of claim 18 , wherein the second annular convex curvature feature is positioned at an outer radial edge of the sputtering surface of the field-enhanced sputtering target.
20. The method of claim 15 , wherein said manufacturing step further comprises:
manufacturing the field-enhanced sputtering target as circular in shape and including a center, with the at least one field-enhanced, protruding convex curvature feature positioned proximate an outer radial edge of the sputtering surface of the field-enhanced sputtering target.