Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement

1. An optical waveguide, comprising:

a substrate;

a first layer with a first refractive index formed directly on top of the substrate; and

a waveguide structure formed directly on top of the first layer,

wherein the waveguide structure includes a waveguide layer which includes ZnS—SiO 2 , the waveguide layer having a higher refractive index than the first refractive index of the first layer,

wherein a light beam coupled into the waveguide layer is guided within the waveguide layer such that the light beam travels along a predefined path volume formed by the waveguide layer, and

wherein the first layer has a first absorption coefficient with respect to a wavelength of light guidable in the waveguide layer, and the substrate has a second absorption coefficient with respect to the wavelength of light guidable in the waveguide layer, the first absorption coefficient being less than the second absorption coefficient.

2. An optical waveguide according to claim 1 , wherein the substrate is made of one of glass, of a polymer, and of a semiconductor material.

3. An optical waveguide according to claim 1 , wherein the first layer is made of one of glass, of SiO 2 , of a semiconductor material, and of a polymer.

4. An optical waveguide according to claim 1 , further comprising:

a cladding layer with a second refractive index, wherein the waveguide structure is sandwiched between the cladding layer and the first layer and the second refractive index is lower than the refractive index of the waveguide layer.

5. An optical waveguide according to claim 1 , wherein the waveguide structure includes a further layer formed on top of the waveguide layer.

6. A sensor arrangement, comprising:

a planar optical waveguide including:

a substrate,

a first layer with a first refractive index formed directly on top of the substrate, and

a planar waveguide structure formed directly on top of the first layer,

wherein said waveguide structure includes a waveguide layer which includes ZnS—SiO 2 , and which has a higher refractive index than the first refractive index of the first layer,

wherein light coupled into the waveguide layer is guided within the waveguide layer, and

wherein the first layer has a first absorption coefficient with respect to a wavelength of light guidable in the waveguide layer, and the substrate has a second absorption coefficient with respect to the wavelength of light guidable in the waveguide layer, the first absorption coefficient being less than the second absorption coefficient;

a light source configured to provide light at the wavelength of light guidable by the waveguide layer to be coupled into the planar optical waveguide;

a sensor configured to detect an auxiliary signal based on said light; and

a processor connected to said sensor, said processor being configured to determine predetermined parameters of an analyte applied on top of the planar optical waveguide by evaluating said auxiliary signal.

7. A method for manufacturing an optical waveguide, comprising:

providing a substrate;

providing a first layer with a first refractive index directly on top of the substrate; and

depositing a waveguide structure directly on top of the first layer,

wherein the waveguide structure includes a waveguide layer of ZnS—SiO 2 , and the first refractive index of the first layer is lower than a refractive index of the waveguide layer,

wherein the waveguide layer is configured such that a light beam at a predetermined wavelength coupled into the waveguide layer is guided within the waveguide layer such that the light beam travels along a predefined path volume formed by the waveguide layer, and

wherein the first layer has a first absorption coefficient with respect to the light beam at the predetermined wavelength, and the substrate has a second absorption coefficient with respect to the light beam at the predetermined wavelength, the first absorption coefficient being less than the second absorption coefficient.

8. A method according to claim 7 , wherein the first layer is a substrate made of one of glass, of a polymer, and of a semiconductor material.

9. A method according to claim 7 , further comprising:

depositing the first layer on the substrate before said depositing the waveguide structure.

10. A method according to claim 9 , wherein the substrate is made of one of glass, a polymer, and a semiconductor material.

11. A method according to claim 7 , wherein first layer is made of SiO 2 .

12. A method according to claim 7 , wherein said depositing the waveguide structure is performed by a process from the group of a physical vapor deposition process, an ion plating process, an evaporation process, a chemical vapor deposition process, a plasma enhanced chemical vapor deposition process, and a sputtering process.

13. A method according to claim 7 ,

wherein said depositing the waveguide structure is performed by a sputtering process, and

wherein one of a ZnS-target and a ZnS—SiO 2 -target is used during the sputtering process.

14. A method according to claim 7 , wherein the content of ZnS in the waveguide layer is between 70% and 90%.

15. A method according to claim 7 , wherein during said depositing the waveguide structure a further layer is deposited on the waveguide layer.

16. A method according to claim 7 , further comprising:

depositing a cladding layer of a second material with a second refractive index on top of the waveguide structure,

wherein the second refractive index is lower than the refractive index of the waveguide layer.

17. An optical waveguide according to claim 1 , wherein the waveguide layer includes ZnS—SiO 2 according to (ZnS) 100-x —(SiO 2 ) x , where x is the weight percentage of SiO 2 and is in a range between 10 and 50.

18. A sensor arrangement according to claim 6 , wherein the waveguide layer includes ZnS—SiO 2 according to (ZnS) 100-x —(SiO 2 ) x , where x is the weight percentage of SiO 2 and is in a range from 10 to 50.

19. An optical waveguide according to claim 1 , wherein an upper side of the waveguide structure opposite a side thereof formed directly on top of the first layer is exposed and without another layer formed thereon.