Systems and methods for fabrication of superconducting integrated circuits
Various techniques and apparatus permit fabrication of superconductive circuits and structures, for instance Josephson junctions, which may, for example be useful in quantum computers. For instance, a low magnetic flux noise trilayer structure may be fabricated having a dielectric structure or layer interposed between two elements or layers capable of superconducting. A superconducting via may directly overlie a Josephson junction. A structure, for instance a Josephson junction, may be carried on a planarized dielectric layer. A fin may be employed to remove heat from the structure. A via capable of superconducting may have a width that is less than about 1 micrometer. The structure may be coupled to a resistor, for example by vias and/or a strap contact connector.
1. A method of fabricating a Josephson junction, the method comprising:
depositing a first dielectric layer;
planarizing a surface of the first dielectric layer;
depositing a first electrode that superconducts at or below a critical temperature over at least a portion of the planarized surface of the first dielectric layer;
forming an electrically insulative layer over at least a portion of the first electrode;
depositing a second electrode that superconducts at or below the critical temperature over at least a portion of the electrically insulative layer;
depositing an additional dielectric layer over at least a portion of the second electrode;
planarizing a surface of the additional dielectric layer;
forming a hole in the additional dielectric layer to expose at least a portion of the second electrode; and
at least partially filling the hole in the additional dielectric layer with a material that superconducts at or below the critical temperature.
2. The method of claim 1 , further comprising:
depositing a second dielectric layer over at least a portion of the planarized surface of the first dielectric layer.
3. The method of claim 1 wherein the first dielectric layer is deposited at a temperature higher than about 200 degrees Celsius.
4. The method of claim 1 wherein forming a hole in the additional dielectric layer includes forming a hole with a width of less than 1 micrometer.
5. A method of fabricating a superconducting integrated circuit, the method comprising:
depositing a first layer of material that superconducts at or below a critical temperature;
forming an electrical insulator layer over at least a portion of the first layer of material that superconducts at or below a critical temperature;
depositing a second layer of material that superconducts at or below a critical temperature over at least a portion of the electrical insulator layer;
depositing a hard mask over at least a portion of the second layer of material that superconducts at or below the critical temperature;
depositing a photoresist over an area of the hard mask, wherein a first portion of the hard mask is covered by the photoresist and a second portion of the hard mask is not covered by the photoresist;
removing the second portion of the hard mask to form a first portion of the second layer of material that superconducts at or below a critical temperature that is covered by the first portion of the hard mask and a second portion of the second layer of material that superconducts at or below a critical temperature that is not covered by the hard mask;
removing the photoresist; and
removing the second portion of the second layer of material that superconducts at or below a critical temperature.
6. The method of claim 5 wherein removing the second portion of the hard mask comprises etching by a microlithography process.
7. The method of claim 5 wherein removing the photoresist comprises etching by a wet etching process.
8. The method of claim 5 wherein removing the second portion of the second layer of material that superconducts at or below a critical temperature comprises etching by an argon gas plasma process.
9. The method of claim 5 wherein removing the second portion of the second layer of material that superconducts at or below a critical temperature comprises etching by a reactive ion etching process.
10. The method of claim 5 wherein at least one of the first and the second layer of material that superconducts at or below a critical temperature comprises niobium.
11. The method of claim 5 , further comprising:
depositing a cap over at least a portion of the integrated circuit.
12. The method of claim 5 wherein the hard mask comprises silicon nitride, and further comprising:
exposing the silicon nitride to an oxygen plasma before depositing the photoresist.
13. The method of claim 5 , further comprising:
depositing a dielectric layer;
planarizing a surface of the dielectric layer;
forming a hole in the dielectric layer wherein a width of the hole is less than 1 micrometer; and
at least partially filling the hole with a material that superconducts at or below a critical temperature.
14. The method of claim 13 wherein forming a hole in the dielectric layer includes forming a hole having a width of less than about 0.5 micrometers.
15. The method of claim 13 wherein the dielectric layer covers at least a portion of the first portion of the second layer of material that superconducts at or below a critical temperature, forming a hole in the dielectric layer exposes at least a portion of the first portion of the second layer of material that superconducts at or below a critical temperature, and at least partially filling the hole provides an electrical connection with the first portion of the second layer of material that superconducts at or below a critical temperature.
16. The method of claim 5 wherein forming an electrical insulator layer over at least a portion of the first layer of material that superconducts at or below a critical temperature comprises:
depositing a metal layer above at least a portion of the first layer of material that superconducts at or below a critical temperature; and
exposing the metal layer to oxygen.
17. The method of claim 5 , further comprising:
removing the first portion of the hard mask.
18. The method of claim 13 wherein removing the first portion of the hard mask comprises etching by a reactive ion etching process.
19. A method of fabricating a superconducting integrated circuit including a Josephson junction having a first superconducting electrode and a second superconducting electrode, the method comprising:
depositing the first electrode of the Josephson junction, wherein the first electrode superconducts at or below a critical temperature;
forming an electrically insulative layer over at least a portion of the first electrode;
depositing the second electrode of the Josephson junction over at least a portion of the electrically insulative layer, wherein the second electrode superconducts at or below a critical temperature;
depositing a photoresist over the second superconducting electrode;
masking and developing the photoresist to produce an area of the second superconducting electrode not covered by the photoresist;
removing the area of the second superconducting electrode not covered by the photoresist;
removing the photoresist;
depositing a dielectric layer over the Josephson junction;
planarizing a surface of the dielectric layer;
forming a hole having a width of less than 1 micrometer in the dielectric layer, wherein the hole exposes at least a portion of the second superconducting electrode; and
depositing a conductive layer comprising a material that superconducts at or below a critical temperature over at least a portion of the dielectric layer, wherein a portion of the conductive layer at least partially fills the hole and establishes electrical communication with the second superconducting electrode of the Josephson junction.
20. The method of claim 19 wherein at least one of the first and the second superconducting electrodes is formed of a material that comprises at least one metal selected from the group consisting of: niobium, aluminum, zinc, tin, and lead.
21. The method of claim 19 wherein forming an electrical insulative layer over at least a portion of the first superconducting electrode comprises:
depositing a metal layer over at least a portion of the first superconducting electrode; and
exposing the metal layer to oxygen.
22. The method of claim 19 wherein removing the area of the second superconducting electrode not covered by the photoresist comprises etching by an argon gas plasma process.
23. The method of claim 19 wherein removing the photoresist comprises etching by a wet etching process.
24. A method of fabricating a superconducting integrated circuit, the method comprising:
forming a platinum resistor carried by a dielectric layer;
forming a first trilayer comprising a first pair of layers of material that are superconducting at and below a critical temperature and first electrically insulative layer interposed between the first pair of layers of material that are superconducting;
forming a second trilayer comprising a second pair of layers of material that are superconducting at and below a critical temperature and a second electrically insulative layer interposed between the second pair of layers of material that are superconducting; and
electrically coupling the first trilayer and the second trilayer through the platinum resistor wherein at least one of the first trilayer and the second trilayer overlies at least a portion of the platinum resistor.
25. The method of claim 24 , further comprising:
forming a fin thermally conductively coupled to the resistor.
26. The method of claim 24 wherein the dielectric layer covers at least a portion of the platinum resistor, and further comprising:
forming a first hole in the dielectric layer to expose at least a first portion of the platinum resistor;
at least partially filling the first hole with a material that is superconducting at and below a critical temperature to provide an electrical connection between the first trilayer and the platinum resistor;
forming a second hole in the dielectric layer to expose at least a second portion of the platinum resistor; and
at least partially filling the second hole with a material that is superconducting at and below a critical temperature to provide an electrical connection between the second trilayer and the platinum resistor.
27. The method of claim 24 , further comprising:
forming a fin on the resistor.
28. The method of claim 24 , further comprising:
forming a fin carried by the dielectric layer.