IP Library Granted Patent US 8,658,885
Granted Patent B2
US 8,658,885 · App. 12/993,467 · Granted Feb 25, 2014

Substrate for thin-film photoelectric conversion device, thin film photoelectric conversion device including the same, and method for producing substrate for thin-film photoelectric conversion device

Inventors: Takashi Kikuchi (Otsu, JP); Toshiaki Sasaki (Otsu, JP)
Assignee: Kaneka Corporation
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Quick Facts
Patent No.
US 8,658,885
App. No.
12/993,467
Granted
Feb 25, 2014
Kind
B2
Abstract

Provided is a substrate for a thin-film photoelectric conversion device which makes it possible to produce the device having improved characteristics at low cost and high productivity. The substrate includes a transparent base member, with a transparent underlying layer and a transparent electrode layer successively stacked on one main surface of the transparent base member. The underlying layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the one main surface with a coverage factor of particles ranging from 30 % or more to less than 80 %. An antireflection layer is provided on the other main surface of the transparent base. The antireflection layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the other main surface with a coverage factor greater than the underlying layer. The transparent electrode layer contains zinc oxide deposited by low-pressure CVD method.

Claims (22)

1. A method for manufacturing a substrate for a thin-film photoelectric conversion device, comprising the steps of:

providing a transparent base member;

washing the transparent base member;

forming a transparent underlying layer on an underlying surface serving as one main surface of the transparent base member, the transparent underlying layer including transparent insulating fine particles having an average particle size in a range from 50 nm to 200 nm and a transparent binder, the transparent insulating fine particles in the transparent underlying layer being dispersed so as to cover the underlying surface with a coverage factor of particles in a range from 30% or more to less than 80%;

forming an antireflection layer on an antireflection surface serving as another main surface on a side opposite to the underlying surface of the transparent base member, the antireflection layer including transparent insulating fine particles and a transparent binder, the transparent insulating fine particles in the antireflection layer being dispersed so as to cover the antireflection layer with a coverage factor of particles being greater than the coverage factor in the underlying layer; and

disposing a transparent electrode layer containing zinc oxide on the transparent underlying layer by using a low-pressure CVD method, wherein

after the step of washing the transparent base member, the transparent underlying layer and the antireflection layer are formed simultaneously by using a dipping method, and wherein

in the step of washing the transparent base member, each of the underlying surface and the antireflection surface of the transparent base member are washed, and conditions for washing the underlying surface of the transparent base member and conditions for washing the antireflection surface of the transparent base member are made different from each other.

2. The method for manufacturing the substrate for a thin-film photoelectric conversion device according to claim 1 , wherein the transparent insulating fine particles in the antireflection layer are dispersed so as to cover the underlying surface with a coverage factor of particles of 80% or more.

3. The method for manufacturing the substrate for a thin-film photoelectric conversion device according to claim 1 , wherein both of the underlying surface and the antireflection surface are subjected to a Cerico washing process, with a pressing force applied onto the antireflection surface upon washing the antireflection surface being made greater than a pressing force applied onto the underlying surface upon washing the underlying surface.

4. The method for manufacturing the substrate for a thin-film photoelectric conversion device according to claim 3 , wherein the Cerico washing process is carried out by using a polishing buff that is impregnated with cerium oxide particles.

5. The method for manufacturing the substrate for a thin-film photoelectric conversion device according to claim 1 , wherein washing the underlying surface of the transparent base member is carried out only by rinsing the underlying surface with pure water, and washing the antireflection surface of the transparent base member is carried out by using a Cerico washing process.

6. The method for manufacturing the substrate for a thin-film photoelectric conversion device according to claim 5 , wherein the Cerico washing process is carried out by using a polishing buff that is impregnated with cerium oxide particles.

7. A method for manufacturing a thin-film photoelectric conversion device comprising the steps of:

providing a substrate for a thin-film photoelectric conversion device by the method according to claim 1 ; and

forming one or more photoelectric conversion units on the transparent electrode layer.

8. The method for manufacturing the thin-film photoelectric conversion device according to claim 7 , wherein the one or more photoelectric conversion units include an amorphous photoelectric conversion unit.

9. The method for manufacturing the thin-film photoelectric conversion device according to claim 7 , wherein the one or more photoelectric conversion units include a crystalline photoelectric conversion unit.

10. A method for manufacturing a thin-film photoelectric conversion device comprising the steps of:

providing a substrate for a thin-film photoelectric conversion device by the method according to claim 1 ; and

forming one or more photoelectric conversion unit layers and a back electrode layer successively on the transparent electrode layer, wherein

the transparent electrode layer, the photoelectric conversion unit layers and the back electrode layer are separated from one another by a plurality of separation grooves so as to form a plurality of photoelectric conversion cells, and the respective photoelectric conversion cells are electrically serially-connected to one another through a plurality of connection grooves.

Assignments (2)
CHANGE OF ADDRESS Recorded Sep 12, 2013
From: KANEKA CORPORATION
To: KANEKA CORPORATION
Reel/Frame 031207/0283 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 18, 2010
From: KIKUCHI, TAKASHI; SASAKI, TOSHIAKI
To: KANEKA CORPORATION
Reel/Frame 025408/0241 →
Priority Claims (1)
JP 2008-134913 · May 23, 2008 · national
Continuity (1)
Related Publication 20110073162A1 · Mar 31, 2011