IP Library Granted Patent US 8,319,428
Granted Patent B2
US 8,319,428 · App. 12/999,537 · Granted Nov 27, 2012

Sealing film for organic EL element, organic EL element, and organic EL display

Assignee: Sharp Kabushiki Kaisha
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Quick Facts
Patent No.
US 8,319,428
App. No.
12/999,537
Granted
Nov 27, 2012
Kind
B2
Abstract

An object of this invention is to provide a sealing film for an organic EL element having excellent moisture resistance, due to the absence of pinholes. A sealing film of this invention is a sealing film for an organic EL element having a layered structure of at least three layers with a silicon nitride film and a silicon oxynitride film layered in alternation, and is characterized in that odd-numbered layers from the side of the organic EL element are silicon nitride films having a film thickness (T 1 ) of 200 nm or greater, and even-numbered layers from the side of the organic EL element are silicon oxynitride films having a film thickness (T 2 ) of 20 nm or greater and 50 nm or less.

Claims (10)

1. A sealing film for an organic EL element, having a layered structure of at least three layers with a silicon nitride film and a silicon oxynitride film layered in alternation, characterized in that

odd-numbered layers from the side of the organic EL element are silicon nitride films having a film thickness T 1 of 200 nm or greater,

even-numbered layers from the side of the organic EL element are silicon oxynitride films having a film thickness T 2 of 20 nm or greater and 50 nm or less, and

an uppermost layer is the silicon nitride film.

2. An organic EL element comprising, in order, a supporting substrate, a lower electrode, an organic EL layer, an upper electrode, and a sealing film, characterized in that

the sealing film has a layered structure of at least three layers with a silicon nitride film and a silicon oxynitride film layered in alternation,

a lowermost layer of the sealing film in contact with the upper electrode as well as odd-numbered layers from the lowermost layer are silicon nitride films having a film thickness T 1 of 200 nm or greater,

even-numbered layers from the lowermost layer of the sealing film are silicon oxynitride films having a film thickness T 2 of 20 nm or greater and 50 nm or less, and

an uppermost layer of the sealing film is a silicon nitride film.

3. An organic EL display, comprising the organic EL element according to claim 2 , and a color conversion layer.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2012
From: FUJI ELECTRIC CO., LTD.
To: SHARP KABUSHIKI KAISHA
Reel/Frame 028486/0959 →
MERGER AND CHANGE OF NAME Recorded Aug 26, 2011
From: FUJI ELECTRIC HOLDINGS CO., LTD.
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 026891/0655 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2011
From: ADACHI, KAZUYA
To: FUJI ELECTRIC HOLDINGS CO., LTD.
Reel/Frame 026549/0491 →
Continuity (1)
Related Publication 20120104945A1 · May 3, 2012