IP Library Granted Patent US 8,404,199
Granted Patent B2
US 8,404,199 · App. 12/999,963 · Granted Mar 26, 2013

Fluorine based vanadium boride nanoparticle synthesis

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Quick Facts
Patent No.
US 8,404,199
App. No.
12/999,963
Granted
Mar 26, 2013
Kind
B2
Abstract

The present disclosure generally relates to Vanadium Boride nanoparticle synthesis. In some examples, a method is described that includes fluorine based Vanadium Boride nanoparticle synthesis. In some examples, the method includes providing Vanadium Boride battery waste products, treating the battery waste products to treat precursors for fluorination, heating the precursors for fluorination to form VF 3 and BH 3 and heating the VF 3 and BH 3 to form VB 2 nanorods in a liquid mixture, wherein the method is performed at less than approximately 700° C.

Claims (30)

1. A method for Vanadium Boride synthesis comprising:

treating battery waste products of a Vanadium Boride battery to form precursors for fluorination;

heating the precursors for fluorination to form VF 3;

heating a compound including BH 4 to form BH 3;

heating the VF 3 and BH 3 to form VB 2 nanorods in a liquid mixture; and

wherein the method is performed at a temperature that is less than approximately 700° C.

2. The method of claim 1 , further comprising removing the VB 2 nanorods and other reaction products.

3. The method of claim 1 , wherein treating the battery waste products comprises adding (NH 4 )HF 2 and acid dissolution followed by NaOH treatment.

4. The method of claim 1 , wherein the precursors to fluorination comprise (NH 4 ) 3 VF 6.

5. The method of claim 1 , wherein heating the precursors to fluorination further comprises heating the precursors to fluorination to a temperature of approximately 300° C.

6. The method of claim 1 , wherein heating the VF 3 and BH 3 further comprises heating the VF 3 and BH 3 to a temperature of approximately 500° C.

7. The method of claim 1 , further comprising pouring the liquid mixture through a filter to capture the VB 2 nanorods.

8. The method of claim 1 , further comprising removing HF and H 2 , wherein HF and H 2 are formed during the heating of the VF 3 and BH 3.

9. A method for Vanadium Boride synthesis comprising:

adding (NH 4 )HF 2 to a Vanadium Oxide to form (NH 4 ) 3 VF 6 and H 2 O;

acid dissolving a Boron Oxide and washing the Boron Oxide with NaOH to form NaBH 4;

adding to the (NH 4 ) 3 VF 6 and heating the (NH 4 ) 3 VF 6 , H 2 O, and NaBH 4 to above approximately 300° C. to form 3 NH 3 , 3 HF, VF 3 , NaH, and BH 3 ; and

heating the 3 NH 3 , 3 HF, VF 3 , NaH, and BH 3 to above 500° C. to form VB 2 nanorods, HF, NaF, and H 2.

10. The method of claim 9 , wherein the Vanadium Oxide and the Boron Oxide are provided in a single container and all subsequent steps are carried out in that container.

11. The method of claim 9 , wherein the Vanadium Oxide and the Boron Oxide are provided in separate containers and all steps are carried out separately until heating of the 3 NH 3 , 3 HF, VF 3 , NaH, and BH 3.

12. The method of claim 9 , further comprising removing the HF.

13. The method of claim 9 , further comprising removing the H 2.

14. The method of claim 9 , further comprising pouring the VB 2 and NaF through a filter to capture the VB 2 nanorods.

15. A non-transitory computer accessible medium having stored thereon computer executable instructions, which, when executed by a computing device, operably enable the computing device to perform a procedure for Vanadium Boride synthesis the procedure comprising:

treating Vanadium Boride battery waste products to form precursors for fluorination;

heating the precursors for fluorination to form VF 3

heating a compound including BH 4 to form BH 3 ; and

heating the VF 3 and BH 3 to form VB 2 nanorods.

16. The non-transitory computer accessible medium of claim 15 , wherein heating the precursors to fluorination comprises heating the precursors to fluorination to a temperature of approximately 300° C.

17. The non-transitory computer accessible medium of claim 15 , wherein heating the VF 3 and BH 3 comprises heating the VF 3 and BH3 to a temperature of approximately 500° C.

Assignments (1)
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →