Magnetic memory element, driving method for same, and nonvolatile storage device

1. A magnetic memory element, comprising:

a spin valve structure having a substantially circular periphery except for a plurality of cutouts extending inward from the periphery, the spin valve structure including a free layer, a pinning layer, and a first nonmagnetic layer that is disposed between the free layer and the pinning layer;

a second nonmagnetic layer, arranged so that the free layer is disposed between the first and second nonmagnetic layers; and

a magnetic change layer that is disposed on the second nonmagnetic layer, and having magnetic characteristics which change according to temperature;

wherein one of the cutouts has a shape that is different from the shape of at least one other of the cutouts.

2. The magnetic memory element according to claim 1 , wherein said one of the cutouts extends along an inward path toward a center of the magnetic memory element, and wherein an orientation of magnetization of the pinning layer is orthogonal to the inward path of said one of the cutouts.

3. The magnetic memory element according to claim 2 , wherein the magnetic change layer comprises an amorphous rare earth-transition metal alloy thin film.

4. The magnetic memory element according to claim 3 , wherein at a certain temperature, the magnetic change layer exhibits magnetization oriented in a film plane and along the direction of extension of the cutout with a different shape, and wherein a component perpendicular to the film plane appears in the magnetization by raising the temperature from the certain temperature.

5. The magnetic memory element according to claim 3 , characterized in that the magnetic change layer is an N-type ferrimagnet having a magnetic compensation temperature T comp in a memory holding operation temperature range of the magnetic memory element.

6. A method of driving a the magnetic memory element according to claim 1 , comprising the step of recording information by applying at least one unipolar electric pulse to the magnetic memory element.

7. The method of according to claim 6 , wherein the at least one unipolar electric pulse includes two or more pulses of different heights, and different information is recorded by changing the height of the second pulse.

8. The method according to claim 7 , wherein regardless of a recording state of the magnetic memory element, recorded multivalue information and types of unipolar electric pulses to record the multivalue information are in a one-to-one correspondence.

9. A nonvolatile storage device, comprising:

the magnetic memory element according to claim 1 ;

a rectifying element connected in series to the magnetic memory element;

information rewrite means for generating a unipolar electric pulse to drive the magnetic memory element; and

means for reading stored information from a current quantity flowing through the magnetic memory element.

10. A method of driving the magnetic memory element according to claim 2 , comprising the step of recording information by applying at least one unipolar electric pulse to the magnetic memory element.

11. The method according to claim 10 , wherein the at least one unipolar electric pulse comprises two or more pulses of different heights, and different information is recorded by changing the height of the second pulse.

12. The method according to claim 11 , wherein regardless of a recording state of the magnetic memory element, recorded multivalue information and types of unipolar electric pulses to record the multivalue information are in a one-to-one correspondence.

13. A nonvolatile storage device, comprising:

the magnetic memory element according to claim 2 ;

a rectifying element connected in series to the magnetic memory element;

information rewrite means for generating a unipolar electric pulse to drive the magnetic memory element; and

means for reading stored information from a current quantity flowing through the magnetic memory element.

14. A method of driving the magnetic memory element according to claim 3 , comprising the step of recording information by applying at least one unipolar electric pulse to the magnetic memory element.

15. The method according to claim 14 , wherein the at least one unipolar electric pulse comprises two or more pulses of different heights, and different information is recorded by changing the height of the second pulse.

16. A nonvolatile storage device, comprising:

the magnetic memory element according to claim 3 ;

a rectifying element connected in series to the magnetic memory element;

information rewrite means for generating a unipolar electric pulse to drive the magnetic memory element; and

means for reading stored information from a current quantity flowing through the magnetic memory element.

17. A method of driving the magnetic memory element according to claim 4 , comprising the step of recording information by applying at least one unipolar electric pulse to the magnetic memory element.

18. A nonvolatile storage device, comprising:

the magnetic memory element according to claim 4 ;

a rectifying element connected in series to the magnetic memory element;

information rewrite means for generating a unipolar electric pulse to drive the magnetic memory element; and

means for reading stored information from a current quantity flowing through the magnetic memory element.

19. A method of driving the magnetic memory element according to claim 5 , comprising the step of recording information by applying at least one unipolar electric pulse to the magnetic memory element.

20. A nonvolatile storage device, comprising:

the magnetic memory element according to claim 5 ;

a rectifying element connected in series to the magnetic memory element;

information rewrite means for generating a unipolar electric pulse to drive the magnetic memory element; and

means for reading stored information from a current quantity flowing through the magnetic memory element.