Optoelectronic component with a protected passivation layer

1. An optoelectronic component comprising:

a carrier;

a metallic mirror layer arranged on the carrier;

a first passivation layer arranged on a region of the metallic mirror layer;

a semiconductor layer that generates an active region being active during electrical operation arranged on the first passivation layer;

a second passivation layer comprising two regions, wherein the first region is arranged on the top face of the semiconductor layer, and the second region being free of the semiconductor layer is arranged on the metallic mirror layer; and

wherein the first and second regions are separated from one another by a region which surrounds the first passivation layer and which is free of the second passivation layer, the semiconductor layer has lateral mesa flanks and overhanging edges with respect to the first passivation layer, the first passivation layer is arranged beneath the edges, and the semiconductor layer projects beyond the first passivation layer.

2. The optoelectronic component according to claim 1 , wherein the first passivation layer and the second passivation layer are arranged spatially separated from one another.

3. The optoelectronic component according to claim 1 , wherein the first passivation layer is interrupted in a region of the overhanging edges, such that a region is formed which is free of the first passivation layer.

4. A thin-film LED chip comprising the optoelectronic component according to claim 1 .

5. The optoelectronic component according to claim 1 , wherein a first region of the second passivation layer is arranged on the top face and also at all its side areas of the semiconductor layer.

6. The optoelectronic component according to claim 1 , wherein the metallic mirror layer is planar so that a second region of the second passivation layer and the first passivation layer, which are arranged on the metallic mirror layer, lie in one plane.

7. The optoelectronic component according to claim 1 , wherein a second region of the second passivation layer is ring-shaped and surrounds the first passivation layer.

8. The optoelectronic component according to claim 1 , wherein a first and second region of the second passivation layer and the first passivation layer are arranged spatially separated from one another.

9. The optoelectronic component according to claim 1 , wherein the first and second passivation layer comprise the same material.

10. The optoelectronic component according to claim 1 , wherein the material of the first and/or second passivation layer is selected from the group of SiO 2 , SiN and Al 2 O 3 .

11. The optoelectronic component according to claim 1 , wherein the first passivation layer has a larger thickness in side view of the optoelectronic component compared to the second passivation layer.

12. An optoelectronic component comprising:

a carrier;

a metallic mirror layer arranged on the carrier;

a first passivation layer arranged on a region of the metallic mirror layer;

a semiconductor layer that generates an active region during electrical operation arranged on the first passivation layer;

a second passivation layer comprising two regions;

wherein

1) the semiconductor layer comprises a top face arranged in side view on an opposite side of the metallic mirror layer;

2) the semiconductor layer further comprises mesa flanks as side areas which have an inclination;

3) the semiconductor layer further comprises edges;

4) the first passivation layer is arranged between the metallic mirror layer and the semiconductor layer;

5) the first passivation layer is arranged beneath the edges of the semiconductor layer;

6) the edges of the semiconductor layer overshadow the first passivation layer;

7) a first region of the second passivation layer is arranged on the top face and on the mesa flanks of the semiconductor layer so that the semiconductor layer is surrounded on the top face and also at its side areas by the first region of the second passivation layer; and

8) a second region of the second passivation layer is planar and arranged on the metallic mirror layer.