Optoelectronic semiconductor chip with gas-filled mirror
View Patent ↗An optoelectronic semiconductor chip includes a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas.
1. An optoelectronic semiconductor chip comprising:
a semiconductor body containing an active region,
a mirror layer, and
contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas,
wherein 1) the semiconductor body is free of a material of the mirror layer and the mirror layer projects beyond all of the contact points in a lateral direction, and 2) the lateral direction runs parallel to an area of a main extension of a topside of the semiconductor body.
2. The chip according to claim 1 , in which at least one contact point forms a closed track.
3. The chip according to claim 1 , in which, when the chip is in operation, an electric current is impressed at least via one of the contact points into the active region.
4. The chip according to claim 1 , in which the at least one cavity is sealed with a passivation material.
5. The chip according to claim 1 , in which the gas is enclosed in at least one of the cavities at a pressure lower than standard pressure.
6. The chip according to claim 1 , in which the contact points are in direct contact with the semiconductor body.
7. The chip according to claim 1 , in which the spacing D between the mirror layer and the semiconductor body is at least 10 nm and at most 10 μm.
8. The chip according to claim 1 , in which the contact points and the mirror layer have at least one metal in common.
9. The chip according to claim 1 , in which the contact points and the mirror layer consist of the same material.
10. The chip according to claim 1 , in which the contact points contain at least one solder material selected from the group consisting of Sn, In, Ga and Bi.
11. A method of producing an optoelectronic semiconductor chip comprising:
providing a semiconductor body with at least one active region,
providing a carrier with a mirror layer,
applying contact points to a top portion of the mirror layer and/or a bottom portion of the semiconductor body, and
connecting the semiconductor body and the mirror layer by way of the contact points using thermocompression, wherein the contact points provide a spacing D between semiconductor body and mirror layer, whereby at least one cavity is formed between mirror layer and semiconductor body, which cavity contains a gas,
wherein 1) the semiconductor body is free of a material of the mirror layer and the mirror layer projects beyond all of the contact points in a lateral direction, and 2) the lateral direction runs parallel to an area of a main extension of a topside of the semiconductor body.
12. The method according to claim 11 , wherein the contact points consist of the same material as the mirror layer.
13. The method according to claim 11 , wherein the contact points are applied using a printing method.
14. The method according to claim 11 , wherein the contact points are applied by vapor deposition.
15. The method according to claim 11 , wherein the contact points are applied as particles.
16. The method according to claim 11 , wherein the contact points are applied as beads.
17. The method according to claim 12 , wherein the contact points are applied using a printing method.
18. The method according to claim 12 , wherein the contact points are applied by vapor deposition.
19. The method according to claim 12 , wherein the contact points are applied as particles.
20. The method according to claim 12 , wherein the contact points are applied as beads.
21. An optoelectronic semiconductor chip comprising:
a carrier,
a semiconductor body containing an active region,
a mirror layer applied on the carrier, and
contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between semiconductor body and mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas,
wherein 1) the semiconductor body is free of a material of the mirror layer and the mirror layer projects beyond all of the contact points in a lateral direction, and 2) the lateral direction runs parallel to an area of a main extension of a topside of the semiconductor body.
22. The chip according to claim 21 , wherein the mirror layer comprises a Bragg mirror.
23. The chip according to claim 21 , wherein the mirror layer comprises a combination of a Bragg mirror and a metallic mirror.