Organic light emitting display

1. An organic light emitting display (OLED) comprising:

a substrate;

a storage capacitor region, a thin film transistor region, and a data line capacitor region each formed on the substrate;

a storage capacitor formed in the storage capacitor region, the storage capacitor comprising:

a first semiconductor layer formed on the substrate;

a gate insulating layer formed on the first semiconductor layer;

a first electrode formed on the gate insulating layer;

an interlayer insulating layer formed on the first electrode; and

a second electrode formed on the interlayer insulating layer, wherein the second electrode is electrically connected to the first semiconductor layer;

a thin film transistor formed in the thin film transistor region, the thin film transistor comprising:

a second semiconductor layer formed on the substrate;

a gate insulating layer formed on the second semiconductor layer;

a gate electrode formed on the gate insulating layer;

a source electrode formed on the gate insulating layer; and

a drain electrode formed on the gate insulating layer;

a first data line capacitor formed in the data line capacitor region, the first data line capacitor comprising:

a third semiconductor layer formed on the substrate;

a gate insulating layer formed on the third semiconductor layer;

an interlayer insulating layer formed on the gate insulating layer; and

a data line formed on the interlayer insulating layer;

an organic light emitting diode formed on the storage capacitor and the thin film transistor and comprising:

a pixel electrode connected to one of the source and drain electrodes;

an organic emission layer formed on the pixel electrode; and

an opposite electrode formed on the storage capacitor, the thin film transistor, and the first data line capacitor; and

a second data line capacitor formed on the data line capacitor region, the second data line capacitor comprising:

the data line;

an insulating layer formed over the data line; and

the opposite electrode, the opposite electrode formed over at least part of the insulating layer.

2. The OLED according to claim 1 , wherein the insulating layer of the second data line capacitor comprises a passivation layer comprising at least one of a silicon oxide (SiO 2 ) layer, a silicon nitride (SiN X ) layer, and a multi-layer thereof.

3. The OLED according to claim 2 , wherein a third data line capacitor comprises the first and second data line capacitors.

4. The OLED according to claim 1 , wherein the insulating layer of the second data line capacitor comprises a planarization layer, comprising at least one of a benzocyclobutene (BCB) layer, a polyimide layer, and a polyacryl layer.

5. The OLED according to claim 4 , wherein a third data line capacitor comprises the first and second data line capacitors.

6. The OLED according to claim 1 , wherein the insulating layer of the second data line capacitor comprises a pixel defining layer comprising at least one of benzocyclobutene (BCB), acrylic photoresist, phenolic photoresist, and imidic photoresist.

7. The OLED according to claim 6 , wherein a third data line capacitor comprises the first and second data line capacitors.

8. The OLED according to claim 7 , wherein the third data line capacitor has a larger capacitance than the storage capacitor.

9. The OLED according to claim 8 , wherein the third data line capacitor has a capacitance of about 20 pF to about 50 pF.

10. The OLED according to claim 9 , wherein the capacitance of the third data line capacitor depends at least in part on at least one of the size of a contact hole, the size of a via hole, and the thickness of at least one of the passivation layer, the planarization layer, and the pixel defining layer.