Accurate gyroscope device using MEMS and quartz
An integrated inertial sensing device. The device includes a substrate member. The device also has a first inertial sensing device comprising at least a first material and configured to detect at least a first direction. The device has a second inertial sensing device comprising at least the first material and configured to detect at least a second direction. The device also has a third inertial sensing device comprising at least a quartz material and configured to detect at least a third direction. The three devices can be integrated to form an integrated inertial sensing device.
1. An integrated inertial sensing device comprising:
a substrate member;
a first inertial sensing device comprising at least a first material and configured to detect at least a first direction, the first inertial sensing device being integrated with the substrate member;
a second inertial sensing device comprising at least the first material and configured to detect at least a second direction, the second inertial sensing device being integrated with the substrate member; and
a third inertial sensing device comprising at least a quartz material and configured to detect at least a third direction, wherein the third inertial sensing device is spatially disposed between the first inertial sensing device and the second inertial sensing device at an angle of 54.7 degrees with respect to the plane defined by the first and second directions.
2. The device of claim 1 wherein the third inertial sensing device is operably coupled to the first inertial sensing device and the second inertial sensing device.
3. The device of claim 2 further comprising one or more modules coupled to the first inertial sensing device, the second inertial sensing device, and the third inertial sensing device.
4. The device of claim 3 wherein the one or more modules are configured to calibrate at least the first inertial sensing device to the third inertial sensing device.
5. The device of claim 4 wherein the one or more modules are configured to calibrate at least the second inertial sensing device to the third inertial sensing device.
6. The device of claim 3 wherein the one or more modules are configured to associate at least the first inertial sensing device to the third inertial sensing device.
7. The device of claim 6 wherein the one or more modules are configured to associate at least the second inertial sensing device to the third inertial sensing device.
8. The device of claim 1 wherein the first inertial sensing device is a first MEMS gyroscope device.
9. The device of claim 1 wherein the second inertial sensing device is a second MEMS gyroscope device.
10. The device of claim 1 wherein the third inertial sensing device is a quartz-based gyroscope device.
11. The device of claim 1 wherein the first material comprises a silicon, dielectric, or metal material.
12. The device of claim 1 wherein the substrate member comprises silicon.
13. An integrated inertial sensing device comprising:
a substrate member;
one or more CMOS integrated circuits formed overlying the substrate member;
a first MEMS inertial sensing device comprising at least a first material and configured to detect at least a first direction, the first inertial sensing device being coupled to the one or more CMOS integrated circuits;
a second MEMS inertial sensing device comprising at least the first material and configured to detect at least a second direction, the second inertial sensing device being coupled to the CMOS integrated circuits; and
an inertial sensing device comprising at least a quartz material and configured to detect at least a third direction, the inertial sensing device being coupled to the CMOS integrated circuits, the inertial sensing device being configured as a reference device for the first and second MEMS inertial sensing devices via the one or more CMOS integrated circuits, wherein the inertial sensing device is spatially disposed between the first MEMS inertial sensing device and the second MEMS inertial sensing device at an angle of 54.7 degrees with respect to the plane defined by the first and second directions.
14. A method of fabricating an integrated inertial sensing device comprising:
providing a substrate member;
forming one or more CMOS circuits overlying the substrate member;
forming one or more CMOS circuits overlying the substrate member;
forming a first inertial sensing device having at least a first material, the first inertial sensing device being configured to detect at least a first direction, the first inertial sensing device being coupled to the one or more CMOS circuits;
forming a second inertial sensing device having at least the first material, the second inertial sensing device being configured to detect at least a second direction, the second inertial sensing device being coupled to the one or more CMOS circuits;
forming a third inertial sensing device comprising at least a quartz material and configured to detect at least a third direction, the inertial sensing device being formed overlying the substrate member, wherein the third inertial sensing device is spatially disposed between the first inertial sensing device and the second inertial sensing device at an angle of 54.7 degrees with respect to the plane defined by the first and second directions;
configuring the first and second inertial sensing devices to use the third inertial sensing device as a reference device for calibration.
15. The method of claim 14 wherein the first inertial sensing device is a first MEMS gyroscope device.
16. The method of claim 14 wherein the second inertial sensing device is a second MEMS gyroscope device.
17. The method of claim 14 wherein the third inertial sensing device is a quartz-based gyroscope device.
18. The method of claim 14 wherein the first material comprises silicon, dielectric, or metal material.
19. The method of claim 14 wherein the substrate member comprises silicon.