Solid-state imaging device, manufacturing method thereof, electronic apparatus, and semiconductor device
View Patent ↗A semiconductor device includes a substrate, a region including a semiconductor element on the substrate, and at least one guard ring structure provided around the region. The guard ring structure includes a guard ring and at least one portion comprised of the substrate.
1. A solid-state imaging device comprising:
a substrate;
a pixel region on the substrate, the pixel region including a plurality of pixels, each pixel having a photoelectric conversion unit; and
at least one guard ring structure provided around the pixel region, the guard ring structure including a guard ring and at least one portion comprised of the substrate.
2. The solid-state imaging device of claim 1 , wherein the at least one portion comprised of the substrate is structured to allow electric charge to migrate past the guard ring.
3. The solid-state imaging device of claim 1 , wherein the guard ring extends through the entire substrate in a thickness direction.
4. The solid-state imaging device of claim 1 , wherein a thickness of the guard ring is less than a thickness of the substrate.
5. The solid-state imaging device of claim 1 , wherein a material of the guard ring is different than a material of the substrate.
6. The solid-state imaging device of claim 1 , wherein the guard ring comprises at least one insulating material.
7. The solid-state imaging device of claim 1 , wherein the guard ring is configured to be a trench, and the trench includes air.
8. The solid-state imaging device of claim 1 , further comprising a photodiode formed within the substrate at the pixel region.
9. The solid-state imaging device of claim 1 , wherein the at least one portion comprised of the substrate is configured to be a slit.
10. The solid-state imaging device of claim 1 , further comprising:
an interconnect layer; and
a guard ring structure provided in the interconnect layer,
wherein,
a material of a guard ring of the guard ring structure in the interconnect layer is different than a material of the interconnect layer.
11. The solid-state imaging device of claim 1 , wherein the at least one guard ring structure includes:
(a) a first guard ring structure including a first guard ring and at least one portion comprised of the substrate, and
(b) a second guard ring structure including a second guard ring and at least one portion comprised of the substrate.
12. The solid-state imaging device of claim 11 , wherein:
the at least one portion comprised of the substrate of the first guard ring structure overlaps a part corresponding to the second guard ring along an axis that is perpendicular to the first guard ring structure and the second guard ring structure.
13. The solid-state imaging device of claim 1 , wherein the solid-state imaging device is a backside illuminated type device.
14. An electronic apparatus comprising:
a solid-state imaging device which includes
(a) a substrate,
(b) a pixel region on the substrate, the pixel region including a plurality of pixels, each pixel having a photoelectric conversion unit, and
(c) at least one guard ring structure provided around the pixel region, the guard ring structure including a guard ring and at least one portion comprised of the substrate.
15. A semiconductor device comprising:
a substrate;
a region including a semiconductor element on the substrate; and
at least one guard ring structure provided around the region, the at least one guard ring structure including a guard ring and at least one portion comprised of the substrate.
16. A method for manufacturing a solid-state imaging device, said method comprising:
forming at least one guard ring structure by (a) forming at least one trench in a portion of a substrate where a guard ring is to be formed, and (b) filling the trench with a material to form the guard ring, the material of the guard ring being different from a material of the substrate, and
dicing the substrate around the at least one guard ring structure,
wherein,
at the time of dicing, the at least one guard ring structure includes the guard ring and at least one portion comprised of the substrate.
17. The method of claim 16 , further comprising:
forming an alignment mark by (a) forming at least one trench in a portion of the substrate where the alignment mark is to be formed and (b) filling the trench of the alignment mark with a material to form the alignment mark,
wherein,
the alignment mark and the at least one guard ring structure are formed at the same time.
18. The method of claim 16 , further comprising:
forming an interconnect layer on one side of the substrate; and
forming a guard ring structure in the interconnect layer,
wherein,
a material of a guard ring of the guard ring structure in the interconnect layer is different than a material of the interconnect layer.
19. The method of claim 16 , further comprising:
planarizing a surface of the substrate to expose the guard ring.
20. The method of claim 16 , further comprising:
planarizing a surface of the substrate,
wherein,
a thickness of the planarized substrate is greater than a thickness of the guard ring.
21. The method of claim 16 , further comprising forming a photodiode within the substrate at a pixel region.
22. The method of claim 16 , wherein the solid-state imaging device is a backside illuminated type device.