Edge-emitting semiconductor laser chip

1. A method for manufacturing an edge emitting semiconductor laser chip, the method comprising:

providing a GaN based mother substrate;

epitaxially growing a useful layer onto the mother substrate;

providing a carrier substrate that comprises an interlayer which is in direct contact with the carrier substrate;

bonding the interlayer onto the useful layer on a side remote from the mother substrate, wherein the interlayer is a bonding layer that provides a mechanical connection between the carrier substrate and the useful layer;

stripping the useful layer from the mother substrate; and

epitaxially growing a component structure with an active zone for generating light onto the useful layer,

wherein the interlayer forms at least part of a cladding layer of the edge emitting semiconductor laser, the interlayer has a lower refractive index than the useful layer which is in direct contact with the interlayer.

2. The method according to claim 1 , wherein the useful layer is in direct contact with a waveguide layer of the component structure.

3. The method according to claim 1 , wherein a further layer of a material having the same composition as the useful layer is deposited epitaxially between the useful layer and a waveguide layer of the component structure, the further layer being in direct contact with the waveguide layer as well as with the useful layer.

4. The method according to claim 1 , wherein the useful layer comprises at least one of InGaN and AlGaN.

5. The method according to claim 4 , wherein the useful layer is stripped from the mother substrate by implantation of hydrogen in a lateral cleave process.

6. The method according to claim 1 , wherein the interlayer forms at least part of the cladding layer.

7. The method according to claim 6 , wherein the interlayer provides an electrical contact between the carrier substrate and the component structure.

8. The method according to claim 1 , wherein the interlayer comprises at least one of the following materials: a transparent and conductive oxide, an indium tin oxide, and a zinc oxide.

9. The method according to claim 1 , wherein the interlayer comprises at least one of the following materials: a silicon oxide, a silicon nitride, an aluminum oxide, a tantalum oxide, and a hafnium oxide.

10. The method according to claim 1 , wherein the useful layer consists of at least one of InGaN and AlGaN.

11. The method according to claim 1 , wherein the interlayer consists of at least one of the following materials: a transparent and conductive oxide, an indium tin oxide, and a zinc oxide.

12. The method according to claim 1 , wherein the interlayer consists of at least one of the following materials: a silicon oxide, a silicon nitride, an aluminum oxide, a tantalum oxide, and a hafnium oxide.

13. A method for manufacturing an edge emitting semiconductor laser chip, the method comprising:

providing a GaN based mother substrate;

epitaxially growing a useful layer onto the mother substrate;

epitaxially growing a component structure with an active zone for generating light onto the useful layer;

applying an interlayer onto the component structure on a side remote from the useful layer; bonding a carrier substrate onto the interlayer

wherein the interlayer is a bonding layer that provides a mechanical connection between the carrier substrate and the component structure; and stripping the component structure from at least one of the mother substrate and the interlayer, wherein the interlayer forms at least part of a cladding layer of the edge emitting semiconductor laser, the interlayer has a lower refractive index than the useful layer which is in direct contact with the interlayer.

14. The method according to claim 13 , further comprising

forming an electrically insulating layer directly onto the component structure,

wherein the electrically insulating layer comprises a contact opening for electrically contacting the component structure, and

wherein the interlayer is in direct contact with the electrically insulating layer, the component structure and the carrier substrate.

15. The method according to claim 13 , further comprising

applying a further interlayer, which is in direct contact with the component structure and which is located on a side of the component structure remote from the carrier substrate;

wherein the active zone is located between the interlayer and the further interlayer; and

wherein the further interlayer forms at least part of a further cladding layer of the edge emitting semiconductor laser.

16. The method according to claim 15 , wherein the further interlayer is formed of a transparent and conductive oxide, and wherein the interlayer and the further interlayer are in direct contact with waveguide layers of the component structure.

17. The method according to claim 13 , wherein the useful layer is completely removed from the completed edge emitting semiconductor laser.

18. The method according to claim 13 , wherein the mother substrate and the useful layer have a low dislocation density, and wherein the carrier substrate is a GaN substrate with a high defect density.