METHOD OF FORMING A SEMICONDUCTOR DEVICE TERMINATION AND STRUCTURE THEREFOR
At least one exemplary embodiment is directed to a semiconductor edge termination structure, where the edge termination structure comprises several conductivity layers and a buffer layer.
1 . A semiconductor device comprising:
a semiconductor substrate of a first conductivity type having an edge portion;
a semiconductor layer of a second conductivity type formed overlying the semiconductor substrate;
an active region formed in a portion of the semiconductor layer; and
an edge termination structure, where the edge termination structure comprises:
a first doped region of a third conductivity type;
a second doped region of a fourth conductivity type formed adjacent to the first doped region;
a first buffer region formed adjacent to the second doped region; and
a third doped region of the fifth conductivity type formed adjacent to the first buffer region.
2 . The semiconductor device according to claim 1 , where the third conductivity type is N, where the first doped region is an N doped region, where the fourth conductivity type is P, where the second doped region is a P doped region, and where the fifth conductivity type is N, where the third doped region is an N doped region.
3 . The semiconductor device according to claim 1 where the end termination structure further comprises:
a fourth doped region of a sixth conductivity type formed adjacent to the third doped region.
4 . The semiconductor device according to claim 3 , where the third conductivity type is N, where the first doped region is an N doped region, where the fourth conductivity type is P, where the second doped region is a P doped region, and where the fifth conductivity type is P, where the third doped region is a P doped region, and where the sixth conductivity type is N, where the fourth doped region if an N doped region.
5 . The semiconductor device according to claim 3 , where the first buffer region comprises:
at least one of a first oxide layer, a gas region, and an insulator.
6 . The semiconductor device according to claim 5 , where the first oxide layer is deposited so that the first oxide layer substantially encircles a gas region.
7 . The semiconductor device according to claim 6 , where the gas region is air.
8 . The semiconductor device according to claim 3 , where the first doped region and the fourth doped region form a first single layer.
9 . The semiconductor device according to claim 8 , where the second doped region and the third doped region form a second single layer.
10 . The semiconductor device according to claim 3 , further comprising:
a first buffer layer, where the first buffer layer lies between the semiconductor layer and the semiconductor substrate.
11 . The semiconductor device according to claim 3 further comprising:
a first separator layer, where the first separator layer lies between the first doped region and the second doped region, and where the first separator layer is at least one of an intrinsic layer and a dielectric layer.
12 . The semiconductor device according to claim 11 further comprising:
a second separator layer where the second separator layer lies between the third doped region and the fourth doped region, and where the second separator layer is at least one of an intrinsic layer and a dielectric layer.
13 . The semiconductor device according to claim 12 , where the first doped region and the fourth doped region form a first single layer, where the second doped region and the third doped region form a second single layer, where the first separator layer and the second separator layer form a third single layer.
14 . The semiconductor device according to claim 13 , further comprising:
a third separator layer, where the third separator layer lies between the first single layer and the semiconductor layer, and where the third separator layer is at least one of an intrinsic layer and a dielectric layer.
15 . The semiconductor device according to claim 3 , where the third conductivity type is P, where the first doped region is an P doped region, where the fourth conductivity type is N, where the second doped region is an N doped region, and where the fifth conductivity type is N, where the third doped region is a N doped region, and where the sixth conductivity type is P, where the fourth doped region if an P doped region.
16 . A semiconductor edge termination structure comprising:
a first layer, where the first layer is formed from an N doped material and is formed in a trench, where at least one wall of the trench is formed in a semiconductor layer that is N− doped;
a separator layer, where the separator layer is adjacent to the first layer but is not adjacent to the substrate, and where the separator layer is at least one of an intrinsic layer and a dielectric layer;
a second layer, where the second layer is formed from a P doped material, were the second layer is adjacent to the separator layer but not the substrate, where the second layer is not adjacent to the first layer; and
a buffer region, where the buffer region is adjacent to the second layer.
17 . The semiconductor edge termination structure according to claim 16 , where the buffer region comprises:
a oxide layer; and
a gas layer, where the oxide layer substantially encompasses the gas layer so that the oxide layer is adjacent to the second layer while the gas layer is not adjacent to the second layer.
18 . A method of forming a semiconductor edge termination structure comprising:
depositing a dielectric layer onto a semiconductor layer;
etching a first recess, where the first recess is etched into the dielectric layer and the semiconductor layer, where the semiconductor layer is doped to a first conductivity type;
depositing a first material into the first recess forming a second recess, where the first material has been doped to a second conductivity;
depositing a second material into the second recess forming a third recess, where the second material has been doped to a third conductivity; and
depositing a third material into the third recess forming a fourth recess, where the third material is a dielectric, where the first material, the second material, and the third material form an edge termination structure in the semiconductor layer, where the edge termination structure is configured to reduce an applied electric field from a first side of the termination structure to a second side of the termination structure.
19 . The method according to claim 18 , where the second conductivity type is N, and where the third conductivity type is P.
20 . The method according to claim 19 , where the termination structure is formed in a semiconductor device, where the semiconductor device is at least one of a JTE-based device, a Field-Plate-based device, a device using P+ rings, a IGBT, a Junction-Schottky diode, and a Thyristor.