Surfaces and coatings for the removal of carbon dioxide
View Patent ↗Apparatus suited for removing carbon dioxide from gases are disclosed. The apparatus may employ bodies having a photocatalytic film. Associated methods and compositions are also disclosed.
1. A method comprising:
flowing an incoming gas stream comprising carbon dioxide through a gas scrubbing apparatus comprising a photocatalytic film, wherein the photocatalytic film comprises:
a matrix;
semiconductor particles within the matrix; and
a charge transfer agent within the matrix;
wherein at least some of the semiconductor particles are separate from at least some of the charge transfer agent; and
removing, via the photocatalytic film, at least 10 ppm/minute carbon dioxide from the incoming gas stream.
2. The method of claim 1 , wherein the carbon dioxide is removed from the incoming gas stream at a rate of at least 0.5 vol. % per hour.
3. The method of claim 1 , wherein the flowing and removing steps occur at ambient conditions.
4. The method of claim 3 , wherein the incoming gas stream has a first concentration of carbon dioxide, wherein the method comprises:
discharging an effluent gas stream from the gas scrubbing apparatus, wherein the effluent gas stream has a second concentration of carbon dioxide, wherein the second concentration of carbon dioxide in the effluent gas stream is at least 1% less than the first concentration of carbon dioxide in the incoming gas stream.
5. The method of claim 4 , wherein the second concentration of the carbon dioxide in the effluent gas stream is at least 5% less than the first concentration of the carbon dioxide in the incoming gas stream.
6. The method of claim 1 , wherein the matrix has a ratio of the semiconductor particles to the charge transfer agent of from 1:1 to 100:1 (semiconductor particles:charge transfer agent).
7. The method of claim 6 , wherein the ratio of the semiconductor particles to the charge transfer agent is at least 5:1 (semiconductor particles:charge transfer agent).
8. The method of claim 6 , wherein the ratio of the semiconductor particles to the charge transfer agent is at least 10:1 (semiconductor particles:charge transfer agent).
9. The method of claim 6 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 75:1 (semiconductor particles:charge transfer agent).
10. The method of claim 6 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 50:1 (semiconductor particles:charge transfer agent).
11. The method of claim 6 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 25:1 (semiconductor particles:charge transfer agent).
12. The method of claim 6 , wherein the charge transfer agent is based on a hydroxide of sodium.
13. A method comprising:
contacting a body comprising a photocatalytic film with a carbon dioxide-containing gas, wherein the photocatalytic film comprises:
a matrix;
semiconductor particles within the matrix; and
a charge transfer agent within the matrix;
wherein at least some of the semiconductor particles are separate from at least some of the charge transfer agent; and
converting, via the body, at least 10 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
14. The method of claim 13 , wherein the converting step comprises:
reacting, in the presence of light, the carbon dioxide-containing gas with at least one of the semiconductor particles and the charge transfer agent to produce a non-carbon dioxide product.
15. The method of claim 13 , wherein the converting step occurs at ambient conditions.
16. The method of claim 15 , wherein the converting step comprises:
producing a carbonate-containing end product via a receptor agent.
17. The method of claim 16 , wherein the charge transfer agent comprises a first alkaline material; and
wherein the receptor agent comprises a second alkaline material, different than the first alkaline material.
18. The method of claim 17 , wherein the first alkaline material comprises sodium and the second alkaline material comprises calcium.
19. The method of claim 13 , wherein the matrix has a ratio of the semiconductor particles to the charge transfer agent of from 1:1 to 100:1 (semiconductor particles:charge transfer agent).
20. The method of claim 19 , wherein the ratio of the semiconductor particles to the charge transfer agent is at least 5:1 (semiconductor particles:charge transfer agent).
21. The method of claim 19 , wherein the ratio of the semiconductor particles to the charge transfer agent is at least 10:1 (semiconductor particles:charge transfer agent).
22. The method of claim 19 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 75:1 (semiconductor particles:charge transfer agent).
23. The method of claim 19 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 50:1 (semiconductor particles:charge transfer agent).
24. The method of claim 19 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 25:1 (semiconductor particles:charge transfer agent).
25. The method of claim 19 , wherein the charge transfer agent is based on a hydroxide of sodium.
26. The method of claim 13 , wherein the converting step comprises converting at least 25 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
27. The method of claim 13 , wherein the converting step comprises converting at least 100 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
28. The method of claim 13 , wherein the converting step comprises converting at least 250 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
29. The method of claim 13 , wherein the converting step comprises converting at least 500 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
30. The method of claim 13 , wherein the converting step comprises converting at least 600 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
31. A method comprising:
contacting a body comprising a photocatalytic film with a carbon dioxide-containing gas, wherein the photocatalytic film comprises:
a matrix;
semiconductor particles within the matrix; and
a charge transfer agent within the matrix; and
converting, via the body, at least 10 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area;
wherein the converting step occurs at ambient conditions; and
wherein the converting step comprises producing a carbonate-containing end product via a receptor agent.
32. The method of claim 31 , wherein the converting step comprises:
reacting, in the presence of light, the carbon dioxide-containing gas with at least one of the particles semiconductor particles and the charge transfer agent to produce a non-carbon dioxide product.
33. The method of claim 31 , wherein the charge transfer agent is a first alkaline material and wherein the receptor agent comprises a second alkaline material, different than the first alkaline material.
34. The method of claim 33 , wherein the first alkaline material comprises sodium and the second alkaline material comprises calcium.
35. The method of claim 31 , wherein at least some of the semiconductor particles are separate from at least some of the charge transfer agent.
36. The method of claim 31 , wherein the matrix has a ratio of the semiconductor particles to the charge transfer agent of from 1:1 to 100:1 (semiconductor particles:charge transfer agent).
37. The method of claim 36 , wherein the ratio of the semiconductor particles to the charge transfer agent is at least 5:1 (semiconductor particles:charge transfer agent).
38. The method of claim 36 , wherein the ratio of the semiconductor particles to the charge transfer agent is at least 10:1 (semiconductor particles:charge transfer agent).
39. The method of claim 36 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 75:1 (semiconductor particles:charge transfer agent).
40. The method of claim 36 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 50:1 (semiconductor particles:charge transfer agent).
41. The method of claim 36 , wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 25:1 (semiconductor particles:charge transfer agent).
42. The method of claim 36 , wherein the charge transfer agent is based on a hydroxide of sodium.
43. The method of claim 31 , wherein the converting step comprises converting at least 25 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
44. The method of claim 31 , wherein the converting step comprises converting at least 100 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
45. The method of claim 31 , wherein the converting step comprises converting at least 250 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
46. The method of claim 31 , wherein the converting step comprises converting at least 500 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.
47. The method of claim 31 , wherein the converting step comprises converting at least 600 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.