Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor
View Patent ↗A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 10 11 to about 10 15 atom/cm 2 . A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.
1. A method of crystallizing a silicon layer, the method comprising:
forming an amorphous silicon layer on a buffer layer on a substrate;
forming a catalyst metal layer consisting of a catalyst metal directly contacting the amorphous silicon layer to have a density of from about 10 11 to about 10 15 atom/cm 2 ; and
thermal-treating the amorphous silicon layer so that a crystalline seed having a pyramid shape is formed on the interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer, and forming a polysilicon layer as a silicon crystal grows by the crystalline seed.
2. The method of claim 1 , wherein the silicon crystal grows in a same direction as the crystallization seed having the pyramid shape.
3. The method of claim 1 , wherein the silicon crystal first grows in a first direction.
4. The method of claim 1 , wherein a component of the catalyst metal is on an interface between the polysilicon layer and the buffer layer, after the polysilicon layer is formed.
5. The method of claim 1 , wherein the crystallization seed comprises a silicide of the catalyst metal.
6. The method of claim 1 , wherein the catalyst metal layer comprises at least one selected from the group consisting of Ni, Pd, Ti, Ag, Au, Al, Sn, Sb, Cu, Co, Mo, Tr, Ru, Rh, Cd, and Pt.
7. The method of claim 1 , wherein the amorphous silicon layer is formed according to plasma enhanced chemical vapor deposition (PECVD), or low pressure chemical vapor deposition (LPCVD).
8. The method of claim 1 , wherein the catalyst metal layer is formed according to physical vapor deposition (PVD), chemical vapor deposition (CVD), or a doping method.
9. The method of claim 8 , wherein the catalyst metal layer is formed according to atomic layer deposition (ALD).