Solid-state imaging device, method of manufacturing thereof, and electronic apparatus

1. A solid-state imaging device comprising:

a first photoelectric conversion portion which selectively receives incident light of a first wavelength range and performs photoelectric conversion thereof; and

a second photoelectric conversion portion which selectively receives incident light of a second wavelength range which is shorter than the first wavelength range and performs photoelectric conversion thereof,

wherein,

the first photoelectric conversion portion is stacked above the second photoelectric conversion portion in an imaging area of a substrate so that the second photoelectric conversion portion receives the incident light of the second wavelength range as light transmitted via the first photoelectric conversion portion,

the first photoelectric conversion portion includes a transmitting portion so that the light of the second wavelength range is transmitted to the second photoelectric conversion portion more than other portions,

the transmitting portion includes a portion satisfying an Equation (1) within a width D which is defined in a direction of the imaging area of the substrate, a refraction index n of a peripheral portion of the transmitting portion, and a longest wavelength λc of the second wavelength range which is selectively photoelectrically converted in the second photoelectric conversion portion; and

Equation (1) is the relationship λ c/n≦ 2 D.

2. The solid-state imaging device according to claim 1 , wherein:

the transmitting portion an Equation (2) within a maximum width L which is defined in the direction of the imaging area of the substrate, the refraction index n of the peripheral portion of the transmitting portion, and the longest wavelength λc of the second wavelength range which is selectively photoelectrically converted in the second photoelectric conversion portion; and

Equation (2) is the relationship λ c/n≦ 2 L.

3. The solid-state imaging device according to claim 2 , wherein the transmitting portion penetrates between an upper surface and a lower surface of the first photoelectric conversion portion,

4. The solid-state imaging device according to claim 2 , wherein the transmitting portion has a pattern surrounded by the first photoelectric conversion portion in the imaging area of the substrate.

5. The solid-state imaging device according to claim 2 , wherein the transmitting portion has a pattern surrounding the first photoelectric conversion portion in the imaging area of the substrate.

6. The solid-state imaging device according to claim 1 , further comprising a third photoelectric conversion portion which selectively receives incident light of a third wavelength range different than that of both the first wavelength range and the second wavelength range and performs photoelectric conversion thereof,

wherein,

the first photoelectric, conversion portion and the second photoelectric conversion portion are stacked above the third photoelectric conversion portion in the imaging area of the substrate so that the third photoelectric conversion portion receives the incident light of the third wavelength range as light transmitted via the first photoelectric conversion portion and the second photoelectric conversion portion.

7. The solid-state imaging device according to claim 6 , wherein:

the first photoelectric conversion portion selectively receives green light as the light of the first wavelength range,

the second photoelectric conversion portion selectively receives blue light as the light of the second wavelength range, and

the third photoelectric conversion portion selectively receives red light as the light of the third wavelength range.

8. The solid-state imaging device according to claim 1 , wherein the transmitting portion is recessed in a concave shape in an upper surface of the first photoelectric conversion portion.

9. The solid-state imaging device according to claim 1 , wherein the first photoelectric conversion portion comprises an organic material.

10. A method manufacturing a solid-state imaging device comprising the step of:

manufacturing the solid-state imaging device to include at least (a) a first photoelectric conversion portion which selectively receives incident light of a first wavelength range and performs photoelectric conversion thereof and (b) a second photoelectric conversion portion which selectively receives incident light of a second wavelength range which is shorter than the first wavelength range and performs photoelectric conversion thereof, the first photoelectric conversion portion being stacked above the second photoelectric conversion portion in an imaging area of a substrate so that the second photoelectric conversion portion receives the incident light of the second wavelength range as light transmitted by the first photoelectric conversion portion,

wherein,

the step of manufacturing the solid-state imaging device includes the step of forming a transmitting portion in the first photoelectric conversion portion so that the incident light of the second wavelength range is transmitted to the second photoelectric conversion portion more than other portions,

in the step of forming of the transmitting portion, the transmitting portion is formed to include a portion satisfying an Equation (1) within a width D which is defined in a direction of the imaging area of the substrate, a refraction index n of a peripheral portion of the transmitting portion, and a longest wavelength λc of the second wavelength range which is selectively photoelectrically converted in the second photoelectric conversion portion, and

Equation (1) is the relationship λ c/n≦ 2 D.

11. An electronic apparatus comprising: at least

a first photoelectric conversion portion which selectively receives incident light of a first wavelength range and performs photoelectric conversion thereof; and

a second photoelectric conversion portion which selectively receives incident light of a second wavelength range which is shorter than the first wavelength range and performs photoelectric conversion thereof;

wherein,

the first photoelectric conversion portion is stacked above the second photoelectric conversion portion in an imaging area of a substrate so that the second photoelectric conversion portion receives the incident light of the second wavelength range as light transmitted via the first photoelectric conversion portion,

a transmitting portion is formed in the first photoelectric conversion portion so that the incident light of the second wavelength range is transmitted to the second photoelectric conversion portion more than other portions, and

the transmitting portion includes a portion satisfying an Equation (1) within a width D which is defined in a direction of the imaging area of the substrate, a refraction index n of a peripheral portion of the transmitting portion, and a longest wavelength λc of the second wavelength range which is selectively photoelectrically converted in the second photoelectric conversion portion, and

Equation (1) is the relationship λ c/n≦ 2 D.