Display device and fabrication method of the same

1. A display device comprising a thin film transistor, which comprises:

an active layer;

a gate electrode;

a source electrode electrically connected to the active layer;

a drain electrode electrically connected to the active layer; and

a gate insulating material formed between the active layer and the gate electrode, wherein the gate insulating material comprises a first layer, a second layer and a third layer;

wherein the second layer has a thickness between about 0.1 to about 1.5 times a thickness of the first layer;

wherein the third layer has a thickness between about 2 to about 12 times the thickness of the second layer, and

wherein at least one of the source electrode or the drain electrode contacts the second layer.

2. The display device of claim 1 , wherein the etching selectivity between the third layer and the second layer is about 1:20 to about 1:8, and the etching selectivity between the second layer and the first layer is about 1:20 to about 1:8.

3. The display device of claim 1 , wherein the first layer and the second layer are formed of different materials than one another such that a response to an etchant is faster for the second layer than the first layer.

4. The display device of claim 1 , wherein the second layer and the third layer are formed of different materials than one another such that a response to an etchant is faster for the third layer than the second layer.

5. The display device of claim 2 , wherein the third layer and the first layer each comprise silicon nitride, and the second layer comprises silicon oxide.

6. The display device of claim 1 , wherein the active layer and the third layer have the same side etched surface.

7. The display device of claim 1 , further comprising a capacitor, which comprises:

a first electrode;

a second electrode; and

a dielectric material positioned between the first electrode and the second electrode.

8. The display device of claim 7 , wherein the first electrode and the gate electrode are formed of the same material and from the same processing.

9. The display device of claim 7 , wherein the second electrode, the source electrode and the drain electrode are formed of the same material and from the same processing.

10. The display device of claim 7 , wherein the first layer and the second layer of the gate insulating material extend to the capacitor to provide the dielectric material.

11. The display device of claim 7 , wherein the dielectric material comprises only one layer, and wherein the first layer of the gate insulating material extends to the capacitor to provide the dielectric material.

12. The display device of claim 7 , wherein the first, the second and the third layers of the gate insulating material, and the active layer extend to the capacitor to provide the dielectric material.

13. The display device of claim 7 , wherein the capacitor further comprises:

a first transparent conductive layer connected with the first electrode; and

a second transparent conductive layer connected with the second electrode.

14. A display device comprising a thin film transistor, which comprises:

an active layer;

a gate electrode;

a source electrode electrically connected to the active layer;

a drain electrode electrically connected to the active layer; and

a gate insulating material formed between the active layer and the gate electrode, wherein the gate insulating material comprises a first layer, a second layer and a third layer;

wherein the second layer has a thickness between about 0.1 to about 1.5 times a thickness of the first layer,

wherein the third layer has a thickness between about 2 to 12 times the thickness of the second layer, and

wherein at least any one of the source electrode and the drain electrode contacts the first layer.

15. The display device of claim 14 , wherein the active layer, the third layer, and the second layer have the same side etched surface.

16. The display device of claim 14 , further comprising a capacitor, which comprises:

a first electrode;

a second electrode; and

a dielectric material positioned between the first electrode and the second electrode.

17. The display device of claim 16 , wherein the first electrode and the gate electrode are formed of the same material and from the same processing.

18. The display device of claim 16 , wherein the second electrode, the source electrode and the drain electrode are formed of the same material and from the same processing.

19. The display device of claim 16 , wherein the first layer and the second layer of the gate insulating material extend to the capacitor to provide the dielectric material.

20. A display device, comprising:

a thin film transistor positioned over a substrate; and

a capacitor positioned over the substrate;

wherein the thin film transistor comprises:

an active layer,

a gate electrode,

a source electrode electrically connected to the active layer,

a drain electrode electrically connected to the active layer, and

a gate insulating material formed between the active layer and the gate electrode, wherein the gate insulating material comprises a first layer, a second layer and a third layer;

wherein the capacitor comprises:

a first electrode,

a second electrode, and

a dielectric material positioned between the first electrode and the second electrode, wherein the dielectric material comprises less layers than the gate insulating material.

21. The display device of claim 20 , wherein the dielectric material comprises the active layer and the third layer.

22. The display device of claim 20 , wherein the dielectric material comprises the active layer, the third layer, and the second layer.

23. The display device of claim 20 , wherein the second layer has a thickness between about 0.1 to about 1.5 times a thickness of the first layer; and wherein the third layer has a thickness between about 2 to about 12 times the thickness of the second layer.