Nonvolatile semiconductor memory device
View Patent ↗According to one embodiment, a nonvolatile semiconductor memory device includes a stacked body, a semiconductor pillar and a charge storage layer. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. The semiconductor pillar is buried in the stacked body, and extends in a stacking direction of the insulating films and the electrode films. The charge storage layer is provided between the electrode films and the semiconductor pillar. The electrode films are divided into a plurality of control gate electrodes. Each of the plurality of control gate electrodes faces the semiconductor pillar and sandwiches the charge storage layer with the semiconductor pillar.
1. A nonvolatile semiconductor memory device, comprising:
a stacked body including a plurality of insulating films alternately stacked with a plurality of electrode films;
a semiconductor pillar buried in the stacked body, and extending in a stacking direction of the insulating films and the electrode films; and
a charge storage layer provided between the electrode films and the semiconductor pillar,
one of the electrode films being divided into a first control gate electrode and a second control gate electrode in a direction perpendicular to the stacking direction, the first control gate electrode and the second control gate electrode sandwiching the semiconductor pillar,
wherein lengths of each portion facing each of the first control gate electrode and the second control gate electrode on an outer edge of the semiconductor pillar in a section orthogonal to the stacking direction are mutually different,
wherein a through-hole is formed in the stacked body, the semiconductor pillar being disposed in the through-hole, and
the first control gate electrode and the second control gate electrode face the semiconductor pillar in the section, and a central axis of the semiconductor pillar is spaced from a straight line connecting the middle points of portions other than portions configuring the through-holes in the end edges opposing each other of the first control gate electrode and the second control gate electrode.
2. The device according to claim 1 , wherein the charge storage layer is divided at each of the first control gate electrode and the second control gate electrode in the section that is orthogonal to the stacking direction.
3. The device according to claim 1 , wherein a memory transistor having the semiconductor pillar, the charge storage layer, and one of the first control gate electrode and the second control gate electrode can store values of three levels or more.