Semiconductor apparatus
View Patent ↗A semiconductor apparatus according to aspects of the invention includes a power MOSFET including a main MOSFET and sensing MOSFET's. The main MOSFET and the sensing MOSFET's are formed on a semiconductor substrate, and a sensing MOSFET is selected for changing the sensing ratio and further for confining the sensing ratio variations within a certain narrow range stably from a low main current range to a high main current range. A semiconductor apparatus according to aspects of the invention facilitates reducing the manufacturing costs thereof, obviating the cumbersomeness caused in the use thereof, and confining the sensing ratio variations within a certain narrow range stably.
1. A semiconductor apparatus comprising:
a semiconductor substrate;
one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;
one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; and
a plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;
wherein,
a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,
wherein,
at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET;
at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT; and
a design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;
the semiconductor apparatus further comprising:
two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;
a gate electrode pad common to the main and sensing MOS transistors;
a drain electrode or a collector electrode common to the main and sensing MOS transistor;
a source electrode or an emitter electrode of the main MOS transistor;
source electrodes or emitter electrodes of the two pieces of the sensing MOS transistor; and
five terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pad.
2. A semiconductor apparatus comprising:
a semiconductor substrate;
one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;
one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; and
a plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;
wherein,
a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,
wherein,
at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET;
at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, and
a design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;
the semiconductor apparatus further comprising:
two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;
a gate electrode pad of the main MOS transistor;
gate electrode pads of the two pieces of the sensing MOS transistor;
a drain electrode or a collector electrode common to the main and sensing MOS transistors;
a source electrode or an emitter electrode of the main MOS transistor;
a source electrode or an emitter electrode common to the two pieces of the sensing MOS transistor; and
six terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pads.
3. A semiconductor apparatus comprising:
a semiconductor substrate;
one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;
one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; and
a plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;
wherein,
a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,
wherein,
at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET,
at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, and
a design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;
the semiconductor apparatus further comprising:
two pieces of the main MOS transistor, the current capacities thereof being different from each other;
a gate electrode pad common to the main and sensing MOS transistors;
a drain electrode or a collector electrode common to the main and sensing MOS transistors;
source electrodes or emitter electrodes of the two pieces of the main MOS transistor;
a source electrode or an emitter electrode of the sensing MOS transistor; and
five terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pad.
4. A semiconductor apparatus comprising:
a semiconductor substrate;
one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;
one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; and
a plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;
wherein,
a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,
wherein,
at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET,
at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, and
a design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;
the semiconductor apparatus further comprising:
two pieces of the main MOS transistor, the current capacities thereof being different from each other;
gate electrode pads of the two pieces of the main MOS transistor;
a gate electrode pad of the sensing MOS transistor;
a drain electrode or a collector electrode common to the main and sensing MOS transistors;
a source electrode or an emitter electrode common to the two pieces of the main MOS transistor;
a source electrode or an emitter electrode of the sensing MOS transistor; and
six terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pads.
5. A semiconductor apparatus comprising:
a semiconductor substrate;
one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;
one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; and
a plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;
wherein,
a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,
wherein,
at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET,
at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, and
a design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;
the semiconductor apparatus further comprising:
two pieces of the main MOS transistor, the current capacities thereof being different from each other;
two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;
a gate electrode pad common to the main and sensing MOS transistors;
a drain electrode or a collector electrode common to the main and sensing MOS transistors;
source electrodes or emitter electrodes of the two pieces of the main MOS transistor;
source electrodes or emitter electrodes of the two pieces of the sensing MOS transistor; and
six terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pad.
6. A semiconductor apparatus comprising:
a semiconductor substrate;
one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;
one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; and
a plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;
wherein,
a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,
wherein,
at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET,
at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, and
a design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;
the semiconductor apparatus further comprising:
two pieces of the main MOS transistor, the current capacities thereof being different from each other;
two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;
gate electrode pads of the two pieces of the main MOS transistor;
gate electrode pads of the two pieces of the sensing MOS transistor;
a drain electrode or a collector electrode common to the main and sensing MOS transistor;
a source electrode or an emitter electrode common to the two pieces of the main MOS transistor;
a source electrode or an emitter electrode common to the two pieces of the sensing MOS transistor; and
seven terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pads.
7. A semiconductor apparatus comprising:
a semiconductor substrate;
a main semiconductor device on the semiconductor substrate, the main semiconductor device making a main current flow;
a plurality of main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; and
a plurality of the sensing semiconductor devices exhibiting different current capacities;
wherein
a combination of a main semiconductor device and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used;
wherein,
the main semiconductor device comprises a main MOS transistor comprising a main MOSFET,
at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, and
a design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;
the semiconductor apparatus further comprising:
two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;
a gate electrode pad common to the main and sensing MOS transistors;
a drain electrode or a collector electrode common to the main and sensing MOS transistor;
a source electrode or an emitter electrode of the main MOS transistor;
source electrodes or emitter electrodes of the two pieces of the sensing MOS transistor; and
five terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pad.