Photodetecting structure with photon sensing graphene layer(s) and vertically integrated graphene field effect transistor

1. An apparatus, comprising:

a photodetecting structure with one or more photon sensing layers of graphene; and

an integrated graphene field effect transistor configured to function as a pre-amplifier for the photodetecting structure, wherein the graphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said photodetecting structure comprises source and drain electrodes configured to function as gates for the graphene field effect transistor.

2. The apparatus of claim 1 , wherein said photodetecting structure is configured to convert photons into an electrical signal, and said pre-amplifier is configured to amplify that signal.

3. The apparatus of claim 1 , comprising in a stacked structure:

said photon sensing layer(s); and

said pre-amplifier above said photon sensing layer(s).

4. The apparatus of claim 1 , comprising a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor.

5. The apparatus of claim 1 , comprising a graphene nanoribbon as the channel of the graphene field effect transistor.

6. An apparatus according to claim 1 , wherein the apparatus is one of: an image sensor for a black and white image system, and an image sensor of a color image system.

7. An apparatus according to claim 6 , wherein the color image system is an RGB-coded system.

8. An apparatus according to claim 1 , wherein the apparatus is a handheld mobile communication device.

9. An apparatus, comprising:

a photodetecting structure with one or more photon sensing layers of graphene; and

an integrated graphene field effect transistor configured to function as a pre-amplifier for the photodetecting structure, wherein the graphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said graphene field effect transistor is implemented in an amplifier layer and a reset transistor is integrated into said amplifier layer and is configured to reset generated charge when needed.

10. A method, comprising:

detecting photons in a photodetecting structure with one or more photon sensing layers of graphene;

amplifying photocurrent generated by the photodetecting structure in a graphene field effect transistor functioning as a pre-amplifier for the photodetecting structure, wherein the graphene field effect transistor is vertically integrated to the photodetecting structure; and

using source and drain electrodes comprised by said photodetecting structure as gates for the graphene field effect transistor.

11. The method of claim 10 , comprising providing a stacked structure comprising:

said photon sensing layer(s); and

said pre-amplifier above said photon sensing layer(s).

12. The method of claim 10 , comprising providing a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor.

13. The method of claim 10 , comprising using a graphene nanoribbon as the channel of the graphene field effect transistor.

14. A method according to claim 10 , comprising:

manufacturing said photodetecting structure with one or more photon sensing layers of graphene and said vertically integrated graphene field effect transistor by chemical vapor deposition.

15. A method, comprising:

detecting photons in a photodetecting structure with one or more photon sensing layers of graphene;

amplifying photocurrent generated by the photodetecting structure in a graphene field effect transistor functioning as a pre-amplifier for the photodetecting structure, wherein the graphene field effect transistor is vertically integrated to the photodetecting structure; and

integrating a reset transistor in an amplifier layer where said graphene field effect transistor also is implemented.