Thin film transistor having semiconductor with different crystallinities and manufacturing method thereof
View Patent ↗A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.
1. A thin film transistor comprising:
a control electrode;
a semiconductor which overlaps the control electrode;
an input electrode and an output electrode disposed adjacent to the semiconductor and opposite to each other; and
a gate insulating layer disposed between the control electrode and the semiconductor;
wherein the semiconductor comprises
a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and
a second portion connected with the first portion, and which overlaps the input electrode or the output electrode, and having a second crystallinity, wherein the first crystallinity is higher than the second crystallinity,
wherein the gate insulating layer comprises a third portion disposed under the semiconductor and a fourth portion except for the third portion,
wherein the fourth portion is thinner than the third portion.
2. The thin film transistor of claim 1 , wherein
the first portion of the semiconductor is thinner than the second portion.
3. The thin film transistor of claim 2 , wherein
a thickness of the first portion of the semiconductor is in a range of approximately 300 to approximately 1500 Å.
4. The thin film transistor of claim 1 , further comprising
ohmic contacts disposed between the second portion of the semiconductor, the input electrode, and the output electrode, and including amorphous semiconductor having an impurity.