IP Library Granted Patent US 8,980,416
Granted Patent B2
US 8,980,416 · App. 13/027,214 · Granted Mar 17, 2015

Architectural construct having for example a plurality of architectural crystals

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,980,416
App. No.
13/027,214
Granted
Mar 17, 2015
Kind
B2
Abstract

An architectural construct is a synthetic material that includes a matrix characterization of different crystals. An architectural construct may be comprised of, for example, graphene, graphite, or boron nitride. It may be configured as a solid mass or as parallel layers that may be as thin as a single atom. In large part, its configuration determines how it behaves under a variety of conditions. In implementations in which it is arranged as parallel layers, the architectural construct can be configured to behave in a desirable manner by selecting the layers' thicknesses, their composition, the amount of distance between them, and/or another variable.

Claims (51)

1. An architectural construct designed to facilitate micro-scale processing on a nano-scale and configured to have an acoustic resonant frequency, the architectural construct comprising:

a first layer comprised of a matrix characterization of crystals and having a first thickness; and

a second layer comprised of a matrix characterization of crystals and having a second thickness,

wherein:

the first and second layers are arranged so that they are parallel to each other,

the matrix characterization of crystals of the first layer and the matrix characterization of crystals of the second layer are arranged in (i) an aligned orientation or (ii) one or both of a translationally offset orientation and a rotationally offset orientation,

the first and second layers are separated by a distance, in which a zone exists between the first and second layers,

the first layer is configured to acoustically resonate at a first resonant frequency, and

the second layer is configured to acoustically resonate at a second resonant frequency,

wherein the distance between the first and second layers, orientation of the matrix characterization of crystals of the first and second layers, and the first and second thicknesses are selected such that the architectural construct acoustically resonates at a predetermined resonant frequency.

2. The architectural construct of claim 1 , wherein the first and second layers are separated by one or more spacer molecules or atoms.

3. The architectural construct of claim 1 , wherein the first and second layers are configured on a support structure.

4. The architectural construct of claim 1 , wherein the first thickness is equal to the second thickness and the first resonant frequency is equal to the second resonant frequency.

5. The architectural construct of claim 1 , wherein the first and second layers are primarily comprised of boron nitride or carbon.

6. The architectural construct of claim 1 , further comprising a dopant in at least one of the first and second layers.

7. The architectural construct of claim 6 , wherein the dopant is presented on an edge of the first layer or the second layer.

8. An architectural construct designed to facilitate micro-scale processing on a nano-scale and configured to have a predetermined index of refraction, the architectural construct comprising:

a first layer comprised of a matrix characterization of a crystal in a first portion of the architectural construct and having a first thickness; and

a second layer comprised of a matrix characterization of a crystal in a second portion of the architectural construct and having a second thickness,

wherein:

the first and second layers are arranged so that they are parallel to each other,

the matrix characterization of the first layer and the matrix characterization of the second layer are arranged in (i) an aligned orientation or (ii) one or both of a translationally offset orientation and a rotationally offset orientation,

the first and second layers are separated by a distance, in which a zone exists between the first and second layers, and

the architectural construct is configured to have a predetermined index of refraction,

and wherein the first and second thicknesses are different thicknesses such that the predetermined index of refraction of the first portion is different than that of the second portion.

9. The architectural construct of claim 8 , wherein the first and second layers are primarily comprised of carbon or boron nitride.

10. The architectural construct of claim 8 , further comprising:

a third layer comprising a matrix characterization of a crystal and having a third thickness; and

a fourth layer comprising a matrix characterization of a crystal and having a fourth thickness,

wherein:

the third and fourth layers are arranged so that they are parallel to the first and second layers,

the third and the fourth layers are separated by a second distance, and

the architectural construct has a different index of refraction through the first and second layers than it does through the third and fourth layers.

11. The architectural construct of claim 8 , wherein the distance between the first and second layers is selected such that the architectural construct has the predetermined index of refraction.

12. The architectural construct of claim 8 , further comprising one or more spacer molecules or atoms to separate the first and second layers by the distance.

13. The architectural construct of claim 8 , further comprising a dopant in at least one of the first and second layers.

14. The architectural construct of claim 13 , wherein the dopant is presented on an edge of the first layer or the second layer.

15. An architectural construct designed to facilitate micro-scale processing on a nano-scale and configured to transmit radiant energy, the architectural construct comprising:

a first layer comprised of a matrix characterization of a crystal and having a first thickness; and

a second layer comprised of a matrix characterization of a crystal and having a second thickness,

wherein:

the first and second layers are arranged so that they are parallel to each other,

the matrix characterization of the first layer and the matrix characterization of the second layer are arranged in (i) an aligned orientation or (ii) one or both of a translationally offset orientation and a rotationally offset orientation,

the first and second layers are separated by a distance, in which a zone exists between the first and second layers, and

wherein the first layer is configured to transmit radiant energy of a first particular wavelength and the second layer is configured to transmit radiant energy of a second particular wavelength through the zone between the layers.

16. The architectural construct of claim 15 , wherein the distance between the first and second layers and the first and second thicknesses is selected such that the architectural construct transmits radiant energy of the particular wavelength through the zone between the layers.

17. The architectural construct of claim 15 , wherein the first and second layers are separated by one or more spacer molecules or atoms.

18. The architectural construct of claim 15 , wherein the first and second layers are configured on a support structure.

19. The architectural construct of claim 15 , wherein the first and second layers are primarily comprised of boron nitride or carbon.

20. The architectural construct of claim 15 , further comprising a dopant in at least one of the first and second layers.

21. The architectural construct of claim 20 , wherein the dopant is presented on an edge of the first layer or the second layer.

Assignments (7)
SECURITY INTEREST Recorded Jul 24, 2019
From: MCALISTER TECHNOLOGIES, LLC
To: PERKINS COIE LLP
Reel/Frame 049846/0329 →
SECURITY INTEREST Recorded Jan 28, 2019
From: MCALISTER TECHNOLOGIES, LLC
To: PERKINS COIE LLP
Reel/Frame 049509/0721 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 29, 2018
From: MCALISTER, ROY EDWARD
To: MCALISTER TECHNOLOGIES, LLC
Reel/Frame 045763/0233 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 9, 2015
From: ADVANCED GREEN TECHNOLOGIES, LLC.
To: ADVANCED GREEN INNOVATIONS, LLC
Reel/Frame 036827/0530 →
TERMINATION OF LICENSE AGREEMENT Recorded Jul 23, 2015
From: MCALISTER, ROY EDWARD
To: MCALISTER TECHNOLOGIES, LLC
Reel/Frame 036176/0079 →
AGREEMENT Recorded Jul 14, 2015
From: MCALISTER, ROY E., MR; MCALISTER TECHNOLOGIES, LLC
To: ADVANCED GREEN TECHNOLOGIES, LLC
Reel/Frame 036103/0923 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2011
From: MCALISTER, ROY EDWARD
To: MCALISTER TECHNOLOGIES, LLC
Reel/Frame 026096/0273 →