Light emitting device, light emitting device package, and lighting system
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive type semiconductor layer including P-type dopants and having a plurality of holes, an electrode connected to the first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, a second conductive type semiconductor layer under the active layer, and an electrode layer under the second conductive type semiconductor layer.
1. A semiconductor light emitting device comprising:
a first conductive type semiconductor layer including a P-type dopant, the first conductive type semiconductor layer having a plurality of holes that penetrate the first conductive type semiconductor layer;
a first electrode layer disposed on the first conductive type semiconductor layer;
an active layer under the first conductive type semiconductor layer;
a second conductive type semiconductor layer including an N-type dopant, the second conductive type semiconductor layer disposed under the active layer;
a second electrode layer disposed under the second conductive type semiconductor layer; and
an insulating material disposed in the plurality of holes of the first conductive type semiconductor layer,
wherein each of the plurality of holes has a depth equal to a thickness of the first conductive type semiconductor layer, and
wherein the insulating material has a height equal to the thickness of the first conductive type semiconductor layer,
wherein the insulating material contacts the active layer.
2. The semiconductor light emitting device of claim 1 , wherein a pattern is formed on a top surface of the first conductive type semiconductor layer.
3. The semiconductor light emitting device of claim 1 , wherein the first electrode layer includes a transparent electrode layer on the first conductive type semiconductor layer, and the second electrode layer includes at least one of a reflective electrode layer and a conductive support member under the second conductive type semiconductor layer.
4. The semiconductor light emitting device of claim 1 , wherein the first electrode layer includes at least one of a reflective electrode layer and a conductive support member disposed on the first conductive type semiconductor layer, and the second electrode layer includes a transparent electrode layer disposed under the second conductive type semiconductor layer.
5. The semiconductor light emitting device of claim 1 , wherein at least 40% of a top surface of the first conductive type semiconductor layer is exposed.
6. The semiconductor light emitting device of claim 1 , wherein the first conductive type semiconductor layer includes a P-type nitride semiconductor doped with the P-type dopant, and the second conductive type semiconductor layer includes an N-type nitride layer doped with the N-type dopant.
7. The semiconductor light emitting device of claim 1 , wherein at least one of the holes is disposed under a region of the first electrode layer.
8. The semiconductor light emitting device of claim 1 , wherein the first conductive type semiconductor layer includes AlN or AlGaN.
9. The semiconductor light emitting device of claim 8 , wherein the holes are disposed at an irregular interval or a regular interval on a whole region of the first conductive type semiconductor layer.
10. The semiconductor light emitting device of claim 8 , wherein a portion of at least one of the holes includes an air gap.
11. The semiconductor light emitting device of claim 10 , wherein the air gap is disposed to be closer to the active layer than a top surface of the first conductive type semiconductor layer.
12. The semiconductor light emitting device of claim 3 , wherein the transparent electrode layer is provided in a concave-convex layer.
13. A semiconductor light emitting device comprising:
a first conductive type semiconductor layer including a P-type dopant, the first conductive type semiconductor layer having a plurality of holes that penetrate the first conductive type semiconductor layer;
a first electrode layer disposed on the first conductive type semiconductor layer;
an active layer under the first conductive type semiconductor layer;
a second conductive type semiconductor layer including an N-type dopant, the second conductive type semiconductor layer disposed under the active layer;
a second electrode layer disposed under the second conductive type semiconductor layer;
an insulating material disposed in the plurality of holes of the first conductive type semiconductor layer; and
wherein each of the plurality of holes has a depth equal to a thickness of the first conductive type semiconductor layer, and
wherein the insulating material has a height equal to the thickness of the first conductive type semiconductor layer,
wherein the first conductive type semiconductor layer includes a second semiconductor layer and a third semiconductor layer that are alternately stacked.