IP Library Granted Patent US 8,269,216
Granted Patent B2
US 8,269,216 · App. 13/027,652 · Granted Sep 18, 2012

Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus

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Quick Facts
Patent No.
US 8,269,216
App. No.
13/027,652
Granted
Sep 18, 2012
Kind
B2
Abstract

A semiconductor device including: a substrate; a first electrode and a second electrode, each being formed on the substrate; a first region that is positioned between the first electrode and the second electrode; a second region that is connected with the first region; an organic semiconductor layer that is provided in the first region and in the second region; and a receptor of the organic semiconductor layer, the receptor being provided so as to surround the second region and having an opening that extends from the second region to the first region.

Claims (20)

1. A semiconductor device comprising:

a substrate;

a first electrode and a second electrode, each being formed on the substrate;

a first region that is positioned between the first electrode and the second electrode;

a second region that is connected with the first region;

an organic semiconductor layer that is provided in the first region and in the second region; and

a receptor of the organic semiconductor layer, the receptor being provided so as to surround the organic semiconductor layer in the second region and having an opening that extends from the second region to the first region, wherein

the organic semiconductor layer in the first region forms a channel region;

the organic semiconductor layer in the second region does not form a channel region; and

the organic semiconductor layer in the first region is not surrounded by the receptor.

2. The semiconductor device according to claim 1 , wherein a conductive material is used to form the receptor.

3. The semiconductor device according to claim 1 , wherein the receptor is formed in one of the first electrode and the second electrode.

4. The semiconductor device according to claim 1 , wherein an insulator is provided at least on the upper surface of the receptor.

5. The semiconductor device according to claim 1 , wherein liquid repellent treatment is applied at least on the upper surface of the receptor.

6. The semiconductor device according to claim 1 , wherein the receptor is divided into a plurality of segments.

7. An electronic apparatus comprising the semiconductor device according to claim 1 .

8. An electronic apparatus comprising the semiconductor device according to claim 2 .

9. An electronic apparatus comprising the semiconductor device according to claim 3 .

10. An electronic apparatus comprising the semiconductor device according to claim 4 .

11. An electronic apparatus comprising the semiconductor device according to claim 5 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2018
From: SEIKO EPSON CORPORATION
To: E INK CORPORATION
Reel/Frame 047072/0325 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2011
From: NAKAMURA, KIYOSHI
To: SEIKO EPSON CORPORATION
Reel/Frame 025810/0298 →