Polycrystalline diamond compact including a polycrystalline diamond table with a thermally-stable region having at least one low-carbon-solubility material and applications therefor
View Patent ↗Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) comprising a polycrystalline diamond (“PCD”) table including a thermally-stable region having at least one low-carbon-solubility material disposed interstitially between bonded diamond grains thereof, and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate, and a PCD table bonded to the substrate. The PCD table includes a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions. The PCD table further includes at least one low-carbon-solubility material disposed in at least a portion of the plurality of interstitial regions. The at least one low-carbon-solubility material exhibits a melting temperature of about 1300° C. or less and a bulk modulus at 20° C. of less than about 150 GPa.
1. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the polycrystalline diamond table further including a working surface spaced from an interfacial surface that is bonded to the substrate, the polycrystalline diamond table additionally including:
a first region extending inwardly from the working surface, the first region including at least one low-carbon-solubility material disposed in at least a portion of the plurality of interstitial regions thereof, the at least one low-carbon-solubility material exhibiting a melting temperature of about 1300° C. or less and a bulk modulus at 20° C. of less than about 150 GPa; and
a second region extending inwardly from the interfacial surface, the second region including a metallic constituent disposed in at least a portion of the plurality of interstitial regions thereof;
wherein the first region exhibits a generally ring-like geometry encircling a portion of the second region and is spaced from the interfacial surface by a portion of the second region.
2. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material exhibits a melting temperature of less than about 1200° C. and a bulk modulus at 20° C. of less than about 140 GPa.
3. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material exhibits a coefficient of thermal expansion of about 3×10 −6 per ° C. to about 20×10 −6 per ° C., a melting temperature of about 180° C. to about 1100° C., and a bulk modulus at 20° C. of about 30 GPa to about 150 GPa.
4. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material exhibits a coefficient of thermal expansion of about 15×10 −6 per ° C. to about 20×10 −6 per ° C., a melting temperature of about 950° C. to about 1100° C., and a bulk modulus at 20° C. of about 120 GPa to about 140 GPa.
5. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material exhibits a coefficient of thermal expansion of about 15×10 −6 per ° C. to about 20×10 −6 per ° C. a melting temperature of about 180° C. to about 300° C., and a bulk modulus at 20° C. of about 45 GPa to about 55 GPa.
6. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material comprises at least one member selected from the group consisting of copper, tin, indium, gadolinium, germanium, gold, silver, aluminum, lead, zinc, cadmium, bismuth, and antimony.
7. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material comprises at least one member selected from the group consisting of copper, tin, indium, and aluminum.
8. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material comprises a metallic, non-ceramic material.
9. The polycrystalline diamond compact of claim 1 wherein the diamond-to-diamond bonding between the diamond grains of the polycrystalline diamond table is sufficiently strong so that the at least one low-carbon-solubility material extrudes out of a working surface of the polycrystalline diamond table during heating thereof at a temperature of at least about 0.6 times the melting temperature of the at least one low-carbon-solubility material, measured in absolute temperature, without fracturing the polycrystalline diamond table.
10. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material is infiltrated into the polycrystalline diamond table from the working surface thereof to no further than an intermediate location therewithin.
11. The polycrystalline diamond compact of claim 1 wherein the first region of the polycrystalline diamond table comprises a metallic constituent in a residual amount, wherein the metallic constituent includes a metal-solvent catalyst.
12. The polycrystalline diamond compact of claim 1 wherein the first region extends from an upper surface of the polycrystalline diamond table to an intermediate depth of about 0.20 mm to about 1.5 mm.
13. The polycrystalline diamond compact of claim 12 wherein the intermediate depth is about 0.65 mm to about 0.90 mm.
14. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material occupies all of the interstitial regions of the first region.
15. The polycrystalline diamond compact of claim 1 wherein the substrate comprises a cemented carbide substrate.
16. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is integrally formed with the substrate.
17. The polycrystalline diamond compact of claim 1 wherein the metallic constituent comprises at least one member selected from the group consisting of iron, nickel, cobalt, and alloys thereof.
18. The polycrystalline diamond compact of claim 1 wherein the metallic constituent comprises a metallic catalyst.
19. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table comprises a leached region exhibiting a residual amount of the at least low-carbon-solubility material of about 0.8 weight percent to about 1.5 weight percent of the leached region.
20. The polycrystalline diamond compact of claim 19 wherein the residual amount is about 1.5 weight percent of the leached region.
21. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material comprises copper.
22. The polycrystalline diamond compact of claim 1 wherein the at least one low-carbon-solubility material comprises a copper alloy.
23. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the polycrystalline diamond table including a working surface spaced from an interfacial surface, the polycrystalline diamond table additionally including;
a first region extending inwardly from the working surface, the first region including at least one low-carbon-solubility material and a residual amount of metal-solvent catalyst disposed in a first portion of the plurality of interstitial regions, the at least one low-carbon-solubility material including at least one member selected from the group consisting of copper, tin, indium, and aluminum, the at least one low-carbon-solubility material exhibiting a melting temperature of about 1300° C. or less;
a second region extending inwardly from the interfacial surface bonded to the substrate at the interfacial surface and including a metallic constituent disposed in a second portion of the plurality of interstitial regions;
wherein the first region exhibits a generally ring-like geometry encircling a portion of the second region and is spaced from the interfacial surface by a portion of the second region; and
wherein the diamond-to-diamond bonding between the diamond grains of the polycrystalline diamond table is sufficiently strong so that the at least one low-carbon-solubility material extrudes out of the working surface during heating thereof at a temperature of at least about 0.6 times the melting temperature of the at least one low-carbon-solubility material, measured in absolute temperature, without fracturing the polycrystalline diamond table.
24. The polycrystalline diamond compact of claim 23 wherein the first region includes a residual amount of the at least one low-carbon-solubility material of about 0.8 weight percent to about 1.5 weight percent of the first region.
25. The polycrystalline diamond compact of claim 23 wherein the first region comprises a leached region including a residual amount of the at least one low-carbon-solubility material of about 0.8 weight percent to about 1.5 weight percent of the first region of the polycrystalline diamond table and the residual amount of the metallic constituent up to 2.0 weight percent of the first region of the polycrystalline diamond table.
26. The polycrystalline diamond compact of claim 23 wherein the at least one member is copper.
27. The polycrystalline diamond compact of claim 23 wherein the substrate includes the metallic constituent therein, and wherein the metallic constituent in the second region of the polycrystalline diamond table is provided from the substrate.
28. The polycrystalline diamond compact of claim 23 wherein the substrate comprises a cobalt-cemented tungsten carbide substrate including the metallic constituent as a cementing constituent therein, wherein the metallic constituent comprises cobalt, and wherein the metallic constituent in the second region of the polycrystalline diamond table is provided from the substrate.