System and method for depositing a material on a substrate
View Patent ↗A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.
1. A distributor assembly comprising:
a first chamber including an interior for receiving a solid material and carrier gas;
a heating element associated with the first chamber for providing a temperature high enough to vaporize at least a portion of the solid material into a vapor;
a first flow path located outside and at least partially surrounding the first chamber for receiving the vapor and the carrier gas from the first chamber and for providing a material flow sufficiently indirect to mix the vapor and the carrier gas into a substantially uniform vapor/carrier gas composition;
a second flow path for receiving the vapor and the carrier gas from the first flow path and for providing a material flow sufficiently indirect to maintain the substantially uniform vapor/carrier gas composition including a flow path inlet located proximate to an outlet of the first flow path and a flow path outlet offset from the flow path inlet such that the flow direction of the vapor/carrier gas must change while flowing from the flow path inlet to the flow path outlet; and
an outlet for directing the uniform vapor/carrier gas composition for deposition onto a surface of a substrate.
2. The distributor assembly of claim 1 , wherein at least one of the first flow path and the second flow path is defined by a non-tubular chamber.
3. The distributor assembly of claim 1 , wherein the first chamber comprises the heating element and is heated by resistive heating.
4. The distributor assembly of claim 1 , wherein the heating element is capable of maintaining the first chamber at a temperature of at least 500 degrees C.
5. The distributor assembly of claim 4 , wherein the heating element is capable of maintaining the first chamber at a temperature of about 500 degrees C. to about 700degrees C.
6. The distributor assembly of claim 1 , wherein the first chamber comprises a plurality of distribution holes.
7. The distributor assembly of claim 1 , further comprising a second chamber having a plurality of distribution holes.
8. The distributor assembly of claim 1 , wherein the first chamber is configured such that substantially no solid material is directed into the first flow path.
9. A system for depositing a film on a substrate comprising:
a material source connected to a distributor assembly and for introducing a solid material and a carrier gas into the distributor assembly, wherein the distributor assembly comprises:
a first chamber including an interior for receiving the solid material and the carrier gas;
a heating element associated with the first chamber and for providing a temperature high enough to vaporize at least a portion of the solid material into a vapor;
a first flow path located outside and at least partially surrounding the first chamber for receiving the vapor and the carrier gas from the first chamber and for providing a material flow sufficiently indirect to mix the vapor and the carrier gas into a substantially uniform vapor/carrier gas composition;
a second flow path for receiving the vapor and the carrier gas from the first flow path and for providing a material flow sufficiently indirect to maintain the substantially uniform vapor/carrier gas composition including a flow path inlet located proximate to an outlet of the first flow path and a flow path outlet offset from the flow path inlet such that the flow direction of the vapor/carrier gas must change while flowing from the flow path inlet to the flow path outlet; and
an outlet for directing the uniform vapor/carrier gas composition for deposition onto a surface of a substrate; and
a conveyor for transporting the substrate proximate to the distributor assembly.
10. The system of claim 9 , wherein at least one of the first flow path and the second flow path is defined by a non-tubular chamber.
11. The system of claim 9 , wherein the first chamber comprises the heating element and is heated by resistive heating.
12. The system of claim 9 , wherein the heating element is capable of maintaining the first chamber at a temperature of at least 500 degrees C.
13. The system of claim 12 , wherein the heating element is capable of maintaining the first chamber at a temperature of about 500 degrees C. to about 700 degrees C.
14. The system of claim 9 , wherein the first chamber comprises a plurality of distribution holes.
15. The system of claim 9 , further comprising a second chamber having a plurality of distribution holes.
16. The system of claim 9 , wherein the first chamber is configured such that substantially no solid material is directed into the first flow path.