Method for manufacturing semiconductor device
View Patent ↗A method for manufacturing a semiconductor device. The method includes forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film; fusing the resin layer so that fusion of a surface section is progressed more than of a central section by a first energy supply processing; forming a resin boss by curing and shrinking the resin layer by a second energy supply processing; and forming an electrical conducting layer which is electrically connected to the electrode pad and passes over the resin boss.
1. A method for manufacturing a semiconductor device, comprising:
(a) forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film;
(b) fusing the resin layer so that fusion of a surface section is progressed more than of a central section by a first energy supply processing;
(c) forming a resin boss by curing and shrinking the resin layer by a second energy supply processing; and
(d) forming an electrical conducting layer which is electrically connected to the electrode pad and passes over the resin boss.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the resin layer other than the central section, that is, only the surface section is fused in the (b) fusing the resin layer so that fusion of the surface section is progressed more than of the central section by the first energy supply processing.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the surface of the resin layer is formed into a curved surface in the (b) fusing the resin layer so that fusion of the surface section is progressed more than of the central section by the first energy supply processing.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the electrical conducting layer formed in the (d) forming an electrical conducting layer which is electrically connected to the electrode pad and passes over the resin boss is in contact with the passivation film.
5. A method for manufacturing a semiconductor device, comprising:
(a) forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film;
(b) forming the energy cured resin layer to have a cross section formed in the shape of an approximate semicircle by fusing the energy cured resin layer so that fusion of a surface section is progressed more than of a central section by a first energy supply processing;
(c) forming a resin boss by curing and shrinking the energy cured resin layer by a second energy supply processing; and
(d) forming an electrical conducting layer which is electrically connected to the electrode pad and passes over the resin boss.