Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof.
1. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween;
a side wall spacer formed on a side wall of the gate electrode;
source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and
a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate,
wherein
the side wall spacer includes a first side wall portion formed on the side wall of the gate electrode and on the semiconductor substrate and having an L-shaped cross section, and a second side wall portion formed on an upper end portion of the first side wall portion and having a gate-length-direction thickness at least larger than a gate-length-direction thickness of a middle portion of the first side wall portion in the height direction, and
the side wall spacer further includes a third side wall portion interposed between the first side wall portion and the side wall of the gate electrode.
2. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween;
a side wall spacer formed on a side wall of the gate electrode;
source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and
a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate,
wherein the side wall spacer includes a first side wall portion formed on the side wall of the gate electrode and on the semiconductor substrate and having an L-shaped cross section, a second side wall portion formed on an upper end portion of the first side wall portion, and a third side wall portion formed on the side surface of the second side wall portion,
a total of a gate-length-direction thickness of the second side wall portion and that of the third side wall portion formed on the side surface of the second side wall portion is larger than a gate-length-direction thickness of a middle portion of the first side wall portion in the height direction, and
the side wall spacer further includes a fourth side wall portion interposed between the first side wall portion and the side wall of the gate electrode.
3. The semiconductor device of claim 1 , wherein the side wall of the gate electrode has a tapered shape.
4. The semiconductor device of claim 1 , further comprising a silicide layer formed on the source/drain region.
5. The semiconductor device of claim 4 , further comprising:
an interlayer insulating film formed on the stress-applying insulating film; and
a contact plug running through the interlayer insulating film and reaching the silicide layer.
6. The semiconductor device of claim 1 , wherein the source/drain region is of an n type.
7. The semiconductor device of claim 6 , wherein the stress-applying insulating film applies a tensile stress in a channel length direction upon a channel region of the semiconductor substrate located under the gate electrode.
8. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween;
a side wall spacer formed on a side wall of the gate electrode;
source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and
a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate,
wherein a gate-length-direction thickness of an upper portion of the side wall spacer in a height direction is at least larger than a gate-length-direction thickness of a middle portion thereof in the height direction, and
a gate-length-direction thickness of a portion of the side wall spacer in contact with the side wall of the gate electrode increases from a middle portion toward a lower portion in the height direction.
9. The semiconductor device of claim 2 , wherein the side wall of the gate electrode has a tapered shape.
10. The semiconductor device of claim 2 , further comprising a silicide layer formed on the source/drain region.
11. The semiconductor device of claim 10 , further comprising:
an interlayer insulating film formed on the stress-applying insulating film; and
a contact plug running through the interlayer insulating film and reaching the silicide layer.
12. The semiconductor device of claim 2 , wherein the source/drain region is of an n type.
13. The semiconductor device of claim 12 , wherein the stress-applying insulating film applies a tensile stress in a channel length direction upon a channel region of the semiconductor substrate located under the gate electrode.
14. The semiconductor device of claim 8 , wherein the side wall of the gate electrode has a tapered shape.
15. The semiconductor device of claim 8 , further comprising a silicide layer formed on the source/drain region.
16. The semiconductor device of claim 15 , further comprising:
an interlayer insulating film formed on the stress-applying insulating film; and
a contact plug running through the interlayer insulating film and reaching the silicide layer.
17. The semiconductor device of claim 8 , wherein the source/drain region is of an n type.
18. The semiconductor device of claim 17 , wherein the stress-applying insulating film applies a tensile stress in a channel length direction upon a channel region of the semiconductor substrate located under the gate electrode.