Semiconductor light-emitting device and method
View Patent ↗The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.
1. A semiconductor light-emitting device, comprising:
a semiconductor light-emitting stack having a first side and a second side opposite to the first side;
a wavelength conversion structure arranged on the first side;
a first attaching layer, doped with a wavelength-converted material, arranged between the semiconductor light-emitting stack and the wavelength conversion structure; and
a reflective layer arranged on the second side.
2. The semiconductor light-emitting device of claim 1 , further comprising an opaque substrate arranged on the reflective layer.
3. The semiconductor light-emitting device of claim 1 , further comprising a protective structure covering the wavelength conversion structure.
4. The semiconductor light-emitting device of claim 1 , further comprising a plurality of optical layers covering the wavelength conversion structure.
5. The semiconductor light-emitting device of claim 1 , further comprising:
an opaque substrate arranged on the second side; and
a second attaching layer arranged between the opaque substrate and the semiconductor light-emitting stack.
6. The semiconductor light-emitting device of claim 1 , further comprising:
a second attaching layer doped with a wavelength-converted material and arranged between the reflective layer and the semiconductor light-emitting stack.
7. A semiconductor light-emitting device, comprising:
a semiconductor light-emitting stack having a first side and a second side opposite to the first side;
a protective structure arranged on the first side;
a wavelength conversion structure formed by a mixture of a wavelength-converted material and an adhesive material; and
a first attaching layer;
wherein the wavelength conversion structure and the first attaching layer are arranged between the semiconductor light-emitting stack and the protective layer.
8. The semiconductor light-emitting device of claim 7 , further comprising:
a reflective layer arranged on the second side for reflecting light from the semiconductor light-emitting stack towards the first side.
9. The semiconductor light-emitting device of claim 7 , further comprising:
an opaque substrate; and
a reflective layer arranged between the opaque substrate and the semiconductor light-emitting stack.
10. The semiconductor light-emitting device of claim 7 , further comprising:
a reflective layer; and
a second attaching layer arranged between the reflective layer and the semiconductor light-emitting stack.
11. The semiconductor light-emitting device of claim 7 , wherein the protective structure, the wavelength conversion structure, and first attaching layer have widths, and at least two of the widths are substantially the same.
12. The semiconductor light-emitting device of claim 7 , wherein the protective structure has a right surface and a left surface parallel to the right surface.
13. The semiconductor light-emitting device of claim 7 , wherein the protective structure comprises a transparent material selected from the group consisting of Su8, BCB, PFCB, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al 2 O 3 , SiO 2 , SiN x , and TiO 2 .
14. A semiconductor light-emitting device, comprising:
a semiconductor light-emitting stack having a first side and a second side opposite to the first side;
a wavelength conversion structure having an opening and arranged on the first side;
a first attaching layer attached to the wavelength conversion structure; and
a protective structure covering the wavelength conversion structure and having a width substantially equal to that of the first attaching layer.
15. The semiconductor light-emitting device of claim 14 , further comprising a reflective layer arranged on the second side.
16. The semiconductor light-emitting device of claim 14 , further comprising:
an opaque substrate arranged on the second side; and
a reflective layer arranged between the opaque substrate and the semiconductor light-emitting stack.
17. The semiconductor light-emitting device of claim 14 , wherein the protective structure has a right surface and a left surface parallel to the right surface.
18. The semiconductor light-emitting device of claim 14 , wherein the protective structure has a flat upmost surface.
19. The semiconductor light-emitting device of claim 14 , wherein the wavelength conversion structure comprises one or more wavelength-converted materials.