Etchant for metal wiring and method for manufacturing metal wiring using the same
View Patent ↗Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
1. An etchant, comprising:
ammonium persulfate;
an organic acid;
an ammonium salt;
a fluorine-containing compound;
a glycol-based compound; and
an azole-based compound.
2. The etchant of claim 1 , wherein
the ammonium salt is present in a range from 0.01 wt % to 5 wt % of the etchant.
3. The etchant of claim 2 , wherein
the ammonium salt comprises at least one of CH 3 COONH 4 , NH 4 NO 3 , (NH 4 ) 2 HPO 4 , NH 4 H 2 PO 4 , NH 4 PO 4 , (NH 4 ) 2 SO 4 , or any combination thereof.
4. The etchant of claim 1 , wherein
the glycol-based compound is present in a range from 0.01 wt % to 10 wt % of the etchant.
5. The etchant of claim 4 , wherein
the glycol-based compound comprises a compound represented by R 1 R 2 H, where R 1 is OH or CH 3 (CX 2 ) n O, X is one of H, OH, and CH 3 , n is 0 to 7, R 2 is (CH 2 CH 2 O) m or (CHCH 3 CH 2 O) m , and m is 1 to 8.
6. The etchant of claim 1 , wherein
the organic acid is present in a range from 0.1 wt % to 30 wt % of the etchant.
7. The etchant of claim 6 , wherein
the organic acid comprises at least one of oxalic acid, oxalacetic acid, fumaric acid, malic acid, succinic acid, acetic acid, butyric acid, palmitic acid, tartaric acid, ascorbic acid, uric acid, sulphonic acid, sulfinic acid, formic acid, citric acid, isocitric acid, α-ketoglutaric acid, glycolic acid, or any combination thereof.
8. The etchant of claim 1 , wherein
the ammonium persulfate is present in a range from 0.1 wt % to 30 wt % of the etchant, the fluorine-containing compound is present in a range from 0.01 wt % to 5 wt % of the etchant, and the azole-based compound is present in a range from 0.01 wt % to 2 wt % of the etchant.
9. The etchant of claim 8 , wherein
the fluorine-containing compound comprises at least one of HF, NaF, NaHF 2 , NH 4 F, NH 4 HF 2 , NH 4 BF 4 , KF, KHF 2 , AlF 3 , HBF 4 , LiF 4 , KBF 4 , CaF 2 , or any combination thereof.
10. The etchant of claim 9 , wherein
the azole-based compound comprises at least one of benzotriazole, aminotetrazole, aminotetrazole of potassium salt, imidazole, pyrazole, or any combination thereof.
11. The etchant of claim 1 , wherein
the metal wiring comprises a copper layer, a copper alloy layer, or a titanium/copper multilayer.
12. The etchant of claim 1 , wherein
the ammonium persulfate is present in a range from 0.1 wt % to 30 wt % of the etchant, the organic acid is present in a range from 0.1 wt % to 30 wt % of the etchant, the ammonium salt is present in a range from 0.01 wt % to 5 wt % of the etchant, the fluorine-containing compound is present in a range from 0.01 wt % to 5 wt % of the etchant, the glycol-based compound is present in a range from 0.01 wt % to 10 wt % of the etchant, and the azole-based compound is present in a range from 0.01 wt % to 2 wt % of the etchant.
13. The etchant of claim 12 , further comprising water as a remaining part.
14. A method of manufacturing metal wiring, comprising:
forming a single layer comprising copper or a multilayer comprising titanium and copper on a substrate; and
etching the single layer or the multilayer by using an etchant,
wherein the etchant comprises ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
15. The method of claim 14 , wherein
the multilayer comprises a lower layer comprising titanium and an upper layer comprising copper, and
etching comprises simultaneously etching the upper layer and the lower layer of the multilayer by the etchant.
16. The method of claim 14 , wherein
in the etchant, the ammonium persulfate is present in a range from 0.1 wt % to 30 wt %, the organic acid is present in a range from 0.1 wt % to 30 wt %, the ammonium salt is present in a range from 0.01 wt % to 5 wt %, the fluorine-containing compound is present in a range from 0.01 wt % to 5 wt %, the glycol-based compound is present in a range from 0.01 wt % to 10 wt %, and the azole-based compound is present in a range from 0.01 wt % to 2 wt %.
17. The method of claim 16 , wherein
the ammonium salt comprises at least one of CH 3 COONH 4 , NH 4 NO 3 , (NH 4 ) 2 HPO 4 , NH 4 H 2 PO 4 , NH 4 PO 4 , (NH 4 ) 2 SO 4 , or any combination thereof.
18. The method of claim 17 , wherein
the glycol-based compound comprises a compound represented by R 1 R 2 H, where R 1 is OH or CH 3 (CX 2 ) n O, X is one of H, OH, and CH 3 , n is 0 to 7, R 2 is (CH 2 CH 2 O) m or (CHCH 3 CH 2 O) m , and m is 1 to 8.
19. The method of claim 18 , wherein
the organic acid comprises at least one of oxalic acid, oxalacetic acid, fumaric acid, malic acid, succinic acid, acetic acid, butyric acid, palmitic acid, tartaric acid, ascorbic acid, uric acid, sulphonic acid, sulfinic acid, formic acid, citric acid, isocitric acid, α-ketoglutaric acid, glycolic acid, and any combination thereof.
20. The method of claim 19 , wherein
the fluorine-containing compound comprises at least one of HF, NaF, NaHF 2 , NH 4 F, NH 4 HF 2 , NH 4 BF 4 , KF, KHF 2 , AlF 3 , HBF 4 , LiF 4 , KBF 4 , CaF 2 , and any combination thereof.
21. The method of claim 20 , wherein
the azole-based compound comprises at least one of benzotriazole, aminotetrazole, aminotetrazole of potassium salt, imidazole, pyrazole, and any combination thereof.