Light emitting device and light emitting device package
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.
1. A light emitting device comprising:
a substrate;
a light emitting structure on the substrate and including a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer;
a first electrode electrically connected to the first semiconductor layer;
a nano-tube layer on the second semiconductor layer;
a current blocking layer between the second semiconductor layer and the nano-tube layer; and
a second electrode on the nano-tube layer,
wherein the nano-tube layer includes a through-hole,
wherein a portion of the second electrode is disposed in the through-hole,
wherein a portion of the nano-tube layer is disposed between the current blocking layer and the second electrode,
wherein the portion of the nano-tube layer disposed between the current blocking layer and the second electrode contacts a top surface of the current blocking layer, and
wherein the second electrode contacts a portion of the current blocking layer and the portion of the nano-tube layer.
2. The light emitting device of claim 1 , wherein the current blocking layer is disposed in the through-hole.
3. The light emitting device of claim 1 , wherein the top surface of the current blocking layer is higher than a bottom surface of the nano-tube layer.
4. The light emitting device of claim 1 , further comprising a passivation layer that surrounds the light emitting structure.
5. The light emitting device of claim 4 , wherein the passivation layer is formed on an outer peripheral portion of the lateral surface of the first conductive semiconductor layer.
6. The light emitting device of claim 5 , wherein the passivation layer is formed on an outer peripheral portion of the lateral surface of the active layer.
7. The light emitting device of claim 6 , wherein the passivation layer is formed on an outer peripheral portion of the second conductive semiconductor layer.
8. The light emitting device of claim 7 , wherein the passivation layer is formed on a top surface of the second conductive semiconductor layer.
9. The light emitting device of claim 1 , wherein the nano-tube layer has a refractive index lower than a refractive index of the light emitting structure.
10. The light emitting device of claim 1 , further comprising a roughness structure disposed on the second conductive semiconductor.
11. The light emitting device of claim 1 , wherein the current blocking layer has a size greater than an area of a bottom of the second electrode.
12. The light emitting device package including the light emitting device of claim 1 , and further including a package body provided to house the light emitting device.
13. A lighting system including a light emitting module portion including the light emitting device package of claim 12 .