Organic light-emitting diode and method for preparing the same

1. An organic light-emitting diode (OLED) comprising:

a substrate;

a first electrode disposed on the substrate;

an organic layer disposed on the first electrode;

a second electrode disposed on the organic layer; and

at least one of a first film and a second film,

wherein:

the first electrode has a second surface facing the organic layer and a first surface opposed to the second surface,

the second electrode has a second surface facing the organic layer and a first surface opposed to the second surface,

the first film comprises a first thermal evaporation material and a first metal particle and is disposed on the first surface of the first electrode,

the second film comprises a second thermal evaporation material and a second metal particle and is disposed on the first surface of the second electrode, and

the first and second thermal evaporation materials are each independently selected from the group consisting of tris-8-quinolinolatoaluminum (Alq 3 ), a compound represented by following Formula 1, and a combination thereof,

wherein, R 1 to R 12 are each independently selected from the group consisting of a hydrogen atom, a hydroxyl group, a cyano group, a substituted or unsubstituted C 1 -C 30 alkyl group, a substituted or unsubstituted C 1 -C 30 alkoxy group, a substituted or unsubstituted C 2 -C 30 alkenyl group, a substituted or unsubstituted C 2 -C 30 alkynyl group, a substituted or unsubstituted C 6 -C 30 aryl group, a substituted or unsubstituted C 3 -C 30 heteroaryl group, and a group represented by —N(A 1 )(A 2 ), wherein the A l and A 2 are each independently a substituted or unsubstituted C 6 -C 30 aryl group, or a substituted or unsubstituted C 3 - C 30 heteroaryl group, and

wherein each of the first and second metal particles comprises particles of at least one metal selected from the group consisting of magnesium (Mg), aluminum (Al), calcium (Ca), tin (Sn), indium (In), and a combination thereof.

2. The OLED of claim 1 , wherein each of the first and second thermal evaporation materials sublimates at a temperature ranging from 100° C. to 500° C., under a pressure of 10 −10 torr to 10 −3 torr.

3. The OLED of claim 1 , wherein the average diameters of the first and second metal particles are each independently in the range of 0.1 nm to 50 nm.

4. The OLED of claim 1 , wherein the amount of the first metal particles is in the range of 1 part to 50 parts by weight, based on 100 parts by weight of the first film.

5. The OLED of claim 1 , wherein the amount of the second metal particle is in the range of 1 part to 50 parts by weight, based on 100 parts by weight of the second film.

6. The OLED of claim 1 , wherein the first and second films have thicknesses ranging from 10 nm to 100 nm.

7. The OLED of claim 1 , wherein:

the first electrode is a transparent electrode or a semi-transparent electrode; and

the substrate, the first film, the first electrode, the organic layer and the second electrode are stacked, in order.

8. The OLED of claim 1 , wherein:

the second electrode is a transparent electrode or a semi-transparent electrode; and

the substrate, the first electrode, the organic layer, the second electrode and the second film are stacked, in order.

9. The OLED of claim 1 , wherein:

the first and second electrodes are independently selected from a transparent electrode and a semi-transparent electrode; and

the substrate, the first film, the first electrode, the organic layer, the second electrode and the second film are stacked, in order.

10. The OLED of claim 1 , wherein the first film directly contacts a surface of the first electrode that faces away from the organic layer.

11. The OLED of claim 1 , wherein the second film directly contacts the surface of the second electrode that faces away from the organic layer.

12. The OLED of claim 1 , wherein the organic layer is patterned into red (R), green (G), and blue (B) pixels, and the first and second films are each formed as single layer including the R, G, and B pixels.

13. The OLED of claim 1 , wherein the organic layer is patterned according to red (R), green (G), and blue (B) pixels,

the first film comprises at least one of a first film-R, a first film-G, and a first film-B, and

the second film comprising at least one of a second film-R, a second film-G, and a second film-B.

14. A method of preparing an OLED, the method comprising:

forming a first electrode on a substrate;

forming an organic layer on the first electrode;

forming a second electrode on the organic layer; and

forming a first film between the first electrode and the substrate, and/or forming a second film on the second electrode, wherein,

the first film comprises a first thermal evaporation material and first metal particles, and

the second film comprises a second thermal evaporation material and second metal particles,

the first and second thermal evaporation materials are each independently selected from the group consisting of tris-8-quinolinolatoaluminum (Alq 3 ) a compound represented by following Formula 1, and a combination thereof,

wherein, R 1 to R 12 are each independently selected from the group consisting of a hydrogen atom, a hydroxyl group, a cyano group, a substituted or unsubstituted C 1 -C 30 alkyl group, a substituted or unsubstituted C 1 -C 30 alkoxy group, a substituted or unsubstituted C 2 -C 30 alkenyl group, a substituted or unsubstituted C 2 -C 30 alkynyl group, a substituted or unsubstituted C 6 -C 30 aryl group, a substituted or unsubstituted C 3 -C 30 heteroaryl group, and a group represented by —N(A 1 )(A 2 ), wherein the A 1 and A 2 , are each independently a substituted or unsubstituted C 6 -C 30 aryl group, or a substituted or unsubstituted C 3 -C 30 heteroaryl group, and

wherein each of the first and second metal particles comprises particles of at least one metal selected from the group consisting of magnesium (Mg), aluminum (Al), calcium (Ca), tin (Sn), indium (In), and a combination thereof.

15. The method of claim 14 , wherein the forming of the first film is performed by coevaporation, using a source of the first thermal evaporation material and a source of the first metal particle.

16. The method of claim 15 , wherein the co-evaporation is performed at a temperature ranging from 100° C. to 500° C., under a pressure ranging 10 −10 torr to 10 −3 torr.

17. The method of claim 14 , wherein the forming of the second film is performed by co-evaporation, using a source of the second thermal evaporation material and a source of the second metal particle.

18. The method of claim 17 , wherein the co-evaporation is performed at a temperature ranging from 100° C. to 500° C., under a pressure ranging 10 −10 torr to 10 −3 torr.